Nucleation mechanism of GaN nanowires grown on (111) Si by molecular beam epitaxy

Nanotechnology

Volumn 20, Issue 41, 2009, Pages

  Landre O ^a   Bougerol, C ^a   Renevier, H ^b   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN BUFFER; DIFFRACTION PEAKS; ELECTRON MICROSCOPY ANALYSIS; FUNCTION OF TIME; GAN NANOWIRES; GROWTH REGIME; IN-SITU; INTENSITY VARIATIONS; ISLANDING; NANOWIRE GROWTH; NUCLEATION MECHANISM; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; PLASTIC RELAXATION; PLASTIC STRAIN; SI (1 1 1); WETTING LAYER;

CRYSTAL GROWTH; ELECTRIC WIRE; EPITAXIAL GROWTH; GALLIUM ALLOYS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WIRES;

GALLIUM NITRIDE;

BUFFER; GALLIUM; GALLIUM NITRIDE; NANOWIRE; OXIDE; PLASTIC; QUANTUM DOT; SILICON; UNCLASSIFIED DRUG; GALLIUM NITRATE;

ARTICLE; CONTROLLED STUDY; ELECTRON MICROSCOPY; PRIORITY JOURNAL; RADIATION SCATTERING; SCANNING ELECTRON MICROSCOPY; STEADY STATE; TEMPERATURE SENSITIVITY; X RAY DIFFRACTION; CHEMISTRY; METHODOLOGY; NANOTECHNOLOGY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE;

GALLIUM; MICROSCOPY, ELECTRON, SCANNING TRANSMISSION; NANOTECHNOLOGY; NANOWIRES;

EID: 70349687600     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/41/415602     Document Type: Article

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