Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering spectroscopy

Applied Physics Letters

Volumn 75, Issue 5, 1999, Pages 674-676

  Sumiya, M ^a   Tanaka, M ^a   Ohtsuka, K ^a,c   Fuke, S ^a   Ohnishi, T ^b,d   Ohkubo, I ^b   Yoshimoto, M ^b   Koinuma, H ^b   Kawasaki, M ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b Tokyo Institute of Technology ^*  (Japan)

^c SANKEN ELECTRIC CO LTD   (Japan)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; SUBSTRATES; SURFACE ROUGHNESS;

BUFFER LAYERS; COAXIAL IMPACT-COLLISION ION SCATTERING SPECTROSCOPY (CAICISS);

SEMICONDUCTING FILMS;

EID: 0032621995     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124478     Document Type: Article

References (18)

1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, Appl. Phys. Lett. 68, 2105 (1996).
2. I. Akasaki, H. Amano, Y. Koide, K. Hiramatsu, and N. Sawaki, J. Cryst. Growth 98, 209 (1989).
3. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 36, L382 (1997).
4. M. Shur, B. Gelmont, and M. Asif Khan, J. Electron. Mater. 25, 777 (1995).
5. S. Fuke, H. Teshigawara, K. Kuwahara, Y. Takano, T. Ito, M. Yanagihara, and K. Ohtsuka, J. Appl. Phys. 83, 764 (1998).
6. J. L. Rouviere, J. L. Weyher, M. Seelmann-Eggerbert, and S. Porowski, Appl. Phys. Lett. 73, 668 (1998).
7. F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337 (1996).
8. L. T. Romano, J. E. Northrup, and M. A. O'Keefe, Appl. Phys. Lett. 69, 2394 (1996).
9. J. L. Rouviere, M. Arlery, R. Niebuhr, K. H. Bachern, and O. Briot, MRS Internet J. Nitride Semicond. Res. 1, 33 (1996): B. Doudin, J. L. Rouviere, and M. Arlery, Appl. Phys. Lett. 69, 2480 (1996).
10. J. L. Rouviere, M. Arlery, R. Niebuhr, K. H. Bachern, and O. Briot, MRS Internet J. Nitride Semicond. Res. 1, 33 (1996): B. Doudin, J. L. Rouviere, and M. Arlery, Appl. Phys. Lett. 69, 2480 (1996).
11. S. Keller, B. P. Keller, Y.-F. Wu, B. Heying, D. Kapolnek, J. S. Speck, U. K. Mishra, and S. P. DenBaars, Appl. Phys. Lett. 68, 1525 (1996).
12. T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, and H. Koinuma, Appl. Phys. Lett. 72, 824 (1998).
13. T. Itoh, M. Sumiya, Y. Takano, K. Ohtsuka, and S. Fuke, Jpn. J. Appl. Phys., Part 1 38, 649 (1999).
14. X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth 189/190, 231 (1998); J. S. Speck (personal communication).
15. X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBaars, and J. S. Speck, J. Cryst. Growth 189/190, 231 (1998); J. S. Speck (personal communication).
16. T. Ohnishi, A. Ohtomo, I. Ohkubo, M. Kawasaki, M. Yoshimoto, and H. Koinuma, Mater. Sci. Eng., B 56, 256 (1998).
17. Y. Kobayashi, T. Akasaka, and N. Kobayashi, Jpn. J. Appl. Phys., Part 2 37, L1208 (1998).
18. H. Yamane, M. Shimada, T. Endo, and F. J. DiSalvo, Jpn. J. Appl. Phys., Part 1 37, 3436 (1998).