Investigation of inversion domain formation in AlN grown on sapphire by MOVPE

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 9, Issue 3-4, 2012, Pages 496-498

  Kueller, Viola ^a   Knauer, Arne ^a   Brunner, Frank ^a   Mogilatenko, Anna ^a   Kneissl, Michael ^a,b   Weyers, Markus ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

AlN; CBED; Inversion domains; MOVPE

Indexed keywords

ALN; ALN LAYERS; C-PLANE SAPPHIRE; CBED; GROWTH CONDITIONS; INVERSION DOMAIN FORMATION; INVERSION DOMAINS; METAL-ORGANIC VAPOUR PHASE EPITAXY; N-POLAR; OXYGEN TERMINATION; REACTOR CONDITIONS; SAPPHIRE SURFACE;

METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM;

EID: 84858833269     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201100495     Document Type: Article

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