Catalyst-free growth of high-optical quality GaN nanowires by metal-organic vapor phase epitaxy

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Chen, X J ^a   Gayral, B ^a   Sam Giao, D ^a   Bougerol, C ^a   Durand, C ^a   Eymery, J ^a  

^a UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

C-SAPPHIRE; CATALYST-FREE; CATALYST-FREE GROWTH; DEFECT-FREE; GAN NANOWIRES; GROWTH REGIME; METAL-ORGANIC VAPOR PHASE EPITAXY; POLARITY CONTROL; PRECURSOR FLOW; STRUCTURAL AND OPTICAL PROPERTIES; V/III RATIO;

CATALYSTS; EPITAXIAL GROWTH; GALLIUM NITRIDE; NANOWIRES; OPTICAL PROPERTIES; SAPPHIRE; VANADIUM; VAPORS; WIRE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 84555202756     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671365     Document Type: Article

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