On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Alloing, B ^a   Vezian S ^a   Tottereau, O ^a   Vennegues P ^a   Beraudo, E ^a   Zuniga Perez J ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIALLY GROWN; GROWTH CONDITIONS; GROWTH TECHNIQUES; INVERSION DOMAINS; METAL-ORGANIC VAPOR PHASE EPITAXY; NITROGEN SOURCES; NUCLEATION STAGES; SAPPHIRE SUBSTRATES; SI (1 1 1); SI(111) SUBSTRATE; SILICON SUBSTRATES;

AMMONIA; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; ORGANOMETALLICS; SAPPHIRE; VAPORS; WIRE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 78651326320     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3525170     Document Type: Article

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