Mobility enhancement and yellow luminescence in Si-doped GaN grown by metalorganic chemical vapor deposition technique

Journal of Crystal Growth

Volumn 182, Issue 3-4, 1997, Pages 314-320

  Lee, In Hwan ^a   Choi, In Hoon ^a   Lee, Cheul Ro ^b   Son, Sung Jin ^b,c   Leem, Jae Young ^b   Noh, Sam Kyu ^b  

^a Korea University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

^c OPTEL Semiconductor Corporation   (South Korea)

Author keywords

Gallium nitride; Hall mobility; Si doping; Yellow luminescence

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL GROWTH; EXCITONS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

HALL MOBILITY; X RAY ROCKING CURVES; YELLOW LUMINESCENCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031550019     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00345-X     Document Type: Article

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