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Physical Review B - Condensed Matter and Materials Physics

Volumn 77, Issue 7, 2008, Pages

Band-edge photoluminescence and reflectivity of nonpolar (11 2̄ 0) and semipolar (11 2̄ 2) GaN formed by epitaxial lateral overgrowth on sapphire

(7) Guhne T a Bougrioua, Z a,c Laugt S a Nemoz, M a Vennegues P a Vinter, B a,b Leroux, M a

a CNRS (France)

b UNIVERSITÉ CÔTE D'AZUR (France)

c UNIV LILLE (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 40949094104 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.77.075308 Document Type: Article

Times cited : (35)

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