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Volumn 2, Issue 17, 2014, Pages 3204-3211

Resistive switching dependence on atomic layer deposition parameters in HfO2-based memory devices

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; COMPUTATIONAL PROCESS; CURRENT VOLTAGE CURVE; ELECTRICAL CHARACTERIZATION; ELECTRICAL MEASUREMENT; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION MEASUREMENT;

EID: 84898080581     PISSN: 20507534     EISSN: 20507526     Source Type: Journal    
DOI: 10.1039/c3tc31819b     Document Type: Article
Times cited : (55)

References (56)
  • 28
    • 84898068551 scopus 로고    scopus 로고
    • Casa software Ltd.
    • http://www.casaxps.com, © Casa software Ltd. 2009
    • (2009)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.