Metal-gate-induced reduction of the interfacial layer in Hf oxide gate stacks

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 25, Issue 2, 2007, Pages 261-268

  Goncharova, L V ^a   Dalponte, M ^a   Gustafsson, T ^a   Celik, O ^a   Garfunkel, E ^a   Lysaght, P S ^b   Bersuker, G ^b  

^a RUTGERS UNIVERSITY   (United States)

^b SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC PROPERTIES; DIFFUSION; INTERFACES (MATERIALS); OXYGEN; REDUCTION; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

DIELECTRIC DEPOSITION; INTERFACIAL LAYER REACTIONS; METAL-GATE-INDUCED REDUCTION;

MOS DEVICES;

EID: 34248590961     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2435376     Document Type: Article

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