Chemical states and electrical properties of a high- k metal oxide/silicon interface with oxygen-gettering titanium-metal-overlayer

Applied Physics Letters

Volumn 89, Issue 14, 2006, Pages

  Seo, Kang Ill ^a   Lee, Dong Ick ^b   Pianetta, Piero ^b   Kim, Hyoungsub ^c   Saraswat, Krishna C ^a   McIntyre, Paul C ^a  

^a Stanford University   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

^c Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL TRAP DENSITY; MIDGAPS; SIO2;

CHEMICAL BONDS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GETTERS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; STRUCTURE (COMPOSITION); TITANIUM;

SILICON COMPOUNDS;

EID: 33749478240     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2358834     Document Type: Article

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