Properties of atomic layer deposited HfO2 thin films

Thin Solid Films

Volumn 517, Issue 24, 2009, Pages 6576-6583

  Hackley, Justin C ^a   Gougousi, Theodosia ^a  

^a UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

Atomic layer deposition; Hafnium oxide; Infrared spectroscopy; Refractive index; XRD

Indexed keywords

AFTER HIGH TEMPERATURE; AS-DEPOSITED FILMS; ATOMIC LAYER DEPOSITED; BULK CRYSTALLINE; CRYSTALLINITIES; FTIR MEASUREMENTS; HAFNIUM OXIDE; HAFNIUM OXIDES; INDEX OF REFRACTION; TETRAKIS; XRD;

AMINATION; AMINES; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; DESORPTION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HAFNIUM; HAFNIUM COMPOUNDS; LIGHT REFRACTION; LITHIUM COMPOUNDS; MORPHOLOGY; OXIDES; REFRACTIVE INDEX; REFRACTOMETERS; SURFACE ROUGHNESS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS FILMS;

EID: 72049111792     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.04.033     Document Type: Article

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