Low-power and nanosecond switching in robust hafnium oxide resistive memory with a thin Ti cap

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 44-46

  Lee, H Y ^a   Chen, Y S ^a   Chen, P S ^b   Wu, T Y ^a   Chen, F ^a   Wang, C C ^a   Tzeng, P J ^a   Tsai, M J ^a   Lien, C ^c  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b MINGHSIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

HfOx; Resistive memory; Ti reactive buffer layer

Indexed keywords

FAST SWITCHING; HAFNIUM OXIDES; HFOX; LOW OPERATION POWER; LOW POWER; MEMORY DEVICE; MEMORY PERFORMANCE; ON/OFF RATIO; OXYGEN ATOM; RESISTANCE STATE; RESISTIVE SWITCHING BEHAVIORS; STACKED LAYER;

BUFFER LAYERS; HAFNIUM; HAFNIUM COMPOUNDS; OXIDES; OXYGEN; SWITCHING; TITANIUM NITRIDE;

OXYGEN VACANCIES;

EID: 72949116562     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034670     Document Type: Article

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