Effect of inner oxygen on the interfacial layer formation for HfO 2 gate dielectric

Journal of Materials Science

Volumn 42, Issue 17, 2007, Pages 7343-7347

  Jiang, Ran ^a   Xie, E Q ^a   Wang, Z F ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; GATE DIELECTRICS; OXIDATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANNEALING ATMOSPHERE; INTERFACIAL LAYER (IL); OXIDIZED SAMPLES;

HAFNIUM COMPOUNDS;

EID: 34547372293     PISSN: 00222461     EISSN: 15734803     Source Type: Journal    
DOI: 10.1007/s10853-007-1584-z     Document Type: Article

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