Plasma treatment of HfO2-based metalinsulatormetal resistive memories

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 29, Issue 4, 2011, Pages

  Vallee C ^a   Gonon, P ^a   Mannequin, C ^a   Chevolleau, T ^a   Bonvalot, M ^a   Grampeix, H ^b   Licitra, C ^b   Rochat, N ^b   Jousseaume, V ^b  

^a Laboratoire Interdisciplinaire de Physique   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; GOLD DEPOSITS; HAFNIUM OXIDES; PLASMA APPLICATIONS; RRAM; TITANIUM COMPOUNDS;

INTERFACIAL LAYER; NH3 PLASMA TREATMENT; PLASMA TREATMENT; POST-DEPOSITION; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE STATE; SWITCHING PROPERTIES;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79960508552     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3599825     Document Type: Article

References (22)

1. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. 21, 2632 (2009). 10.1002/adma.200900375
2. K. Li, Y. Xia, B. Xu, X. Gao, H. Guo, Z. Liu, and J. Yin, Appl. Phys. Lett. 96, 182904 (2010). 10.1063/1.3425671
3. D-H. Kwon, Nat. Nanotechnol. 5, 148 (2010). 10.1038/nnano.2009.456
4. R. Fors, S. I. Khartsev, and A. M. Grishin, Phys. Rev. B 71, 045305 (2005). 10.1103/PhysRevB.71.045305 (Pubitemid 40418089)
5. W. Shen, R. Dittman, U. Breuer, and R. Waser, Appl. Phys. Lett. 93, 222102 (2008). 10.1063/1.3039809
6. M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya, Appl. Phys. Lett. 89, 223509 (2006). 10.1063/1.2397006 (Pubitemid 44847628)
7. K. M. Kim and C. S. Hwang, Appl. Phys. Lett. 94, 122109 (2009). 10.1063/1.3108088
8. P. Gonon, M. Mougenot, C. Vallée, C. Jorel, V. Jousseaume, H. Grampeix, and F. EL Kamel, J. Appl. Phys. 107, 074507 (2010). 10.1063/1.3357283
9. N. Posseme, T. Chevolleau, O. Joubert, L. Vallier, and P. Mangiagalli, J. Vac. Sci. Technol. B 21, 2432 (2003). 10.1116/1.1627337
10. C. Jorel, C. Vallée, E. Gourvest, B. Pelissier, M. Kahn, M. Bonvalot, and P. Gonon, J. Vac. Sci. Technol. B 27, 378 (2009). 10.1116/1.3021036
11. L. Goux, Y. Y. Chen, L. Pantisano, X. P. Wang, G. Groeseneken, M. Jurczak, and D. J. Wouters, Electrochem. Solid-State Lett. 13, G54 (2010). 10.1149/1.3373529
12. G. G. Aygun and I. Yildiz, J. Appl. Phys. 106, 014312 (2009). 10.1063/1.3153953
13. G. He, L. D. Zhang, and Q. Fang, J. Appl. Phys. 100, 083517 (2006). 10.1063/1.2361161 (Pubitemid 44664742)
14. F. Ferrieu, K. Dabertrand, S. Lhostis, V. Ivanova, E. Martinez, C. Licitra, and G. Rolland, J. Non-Cryst. Solids 353, 658 (2007). 10.1016/j.jnoncrysol.2006.10.032 (Pubitemid 46341347)
15. 3 films by PE-MOCVD for CMOS and MIM capacitors., Ph.D. thesis (Grenoble University, 2004).
16. Y. Nakamura, I. Asano, M. Hiratmi, T. Saito, and H. Goto, 2001 Symposium on VLSI Technology, Digest of Technical Papers, Kyoto, Japan (IEEE, New York, 2001).
17. C. Y. Lin, C. Y. Wu, T. Y. Tseng, and C. Hu, J. Appl. Phys. 102, 094101 (2007). 10.1063/1.2802990
18. D-S. Yoon, J. S. Roh, H. K. Baik, and S-M. Lee, Crit. Rev. Solid. State Mater. Sci. 27, 143 (2002). 10.1080/10408430208500495
19. T-K. Kang, C-W. Chen, C-L. Lin, and W-F. Wu, Jpn. J. Appl. Phys. 47, 5374 (2008). 10.1143/JJAP.47.5374
20. Ch. Walczyk, J. Vac. Sci. Technol. B 29, 01AD02 (2003). 10.1116/1.3536524
21. P-.S. Chen, H-Y. Lee, Y-S. Chen, P-Y. Gu, F. Chen, and M. J. Tsai, Electrochem. Solid-State Lett. 13, H423 (2010). 10.1149/1.3489079
22. J. J. Yang, Adv. Mater. 22, 4034 (2010). 10.1002/adma.201000663