Oxygen vacancies in high-k oxides

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2028-2031

  Tse, K ^a   Liu, D ^a   Xiong, K ^a,b   Robertson, J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b IMEC   (Belgium)

Author keywords

Calculations; Gate oxide; Instability; Oxygen vacancy

Indexed keywords

CHARGE TRAPPING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MICROELECTRODES; PERMITTIVITY; THRESHOLD VOLTAGE;

BAND EDGES; CHARGE PUMPING; GATE OXIDES; WORK FUNCTIONS;

OXYGEN VACANCIES;

EID: 34248667023     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.020     Document Type: Article

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