Properties of HfO2 thin films grown by ALD from hafnium tetrakis(ethylmethylamide) and water

Journal of the Electrochemical Society

Volumn 151, Issue 8, 2004, Pages

  Kukli, Kaupo ^a,c   Ritala, Mikko ^a   Lu, Jun ^b   Hårsta, Anders ^b   Leskelä, Markku ^a  

^a UNIVERSITY OF HELSINKI   (Finland)

^b UPPSALA UNIVERSITY   (Sweden)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

ALD REACTORS; ATOMIC LAYER DEPOSITION (ALD); X-RAY DIFFRACTOMETERS; X-RAY REFLECTION PATTERNS;

COMPLEXATION; CRYSTAL GROWTH; CRYSTALLIZATION; DIFFRACTOMETERS; ELECTROCHEMISTRY; ELECTRON ENERGY LOSS SPECTROSCOPY; LEAKAGE CURRENTS; PARAFFINS; PERMITTIVITY; SILICON; THICKNESS CONTROL; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; WATER; X RAY DIFFRACTION;

HAFNIUM COMPOUNDS;

EID: 4344581452     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1770934     Document Type: Article

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