Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper

Applied Surface Science

Volumn 285, Issue PARTB, 2013, Pages 545-551

  King, Sean W ^a   French, Marc ^a   Xu, Guanghai ^a   French, Benjamin ^a   Jaehnig, Milt ^a   Bielefeld, Jeff ^a   Brockman, Justin ^a   Kuhn, Markus ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Amorphous; Boron; Carbide; Valence band offset; XPS

Indexed keywords

AMORPHOUS MATERIALS; BORON; BORON CARBIDE; CARBIDES; COPPER; HETEROJUNCTIONS; INTERFACES (MATERIALS); PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SILICON; VALENCE BANDS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS BORON; BAND DISCONTINUITIES; CU SUBSTRATE; HETEROSTRUCTURE DEVICES; POLYCRYSTALLINE; SCHOTTKY BARRIERS; VALENCE BAND OFFSETS;

AMORPHOUS SILICON;

EID: 84887084184     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.08.090     Document Type: Article

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