-
1
-
-
0141494576
-
-
10.1143/JJAP.42.4489
-
C. Chiang, Z. Wu, W. Wu, M. Chen, C. Ko, H. Chen, S. Jang, C. Yu, and M. Liang, Jpn. J. Appl. Phys, 42, 4489 (2003). 10.1143/JJAP.42.4489
-
(2003)
Jpn. J. Appl. Phys
, vol.42
, pp. 4489
-
-
Chiang, C.1
Wu, Z.2
Wu, W.3
Chen, M.4
Ko, C.5
Chen, H.6
Jang, S.7
Yu, C.8
Liang, M.9
-
2
-
-
0000800923
-
-
10.1063/1.349118
-
A. Bath, P. van der Put, J. Becht, and J. Schoonman, J. Appl. Phys., 70, 4366 (1991). 10.1063/1.349118
-
(1991)
J. Appl. Phys.
, vol.70
, pp. 4366
-
-
Bath, A.1
Van Der Put, P.2
Becht, J.3
Schoonman, J.4
-
4
-
-
0020737896
-
-
10.1143/JJAP.22.L216
-
H. Miyamoto, M. Hirose, and Y. Osaka, Jpn. J. Appl. Phys., 22, L216 (1983). 10.1143/JJAP.22.L216
-
(1983)
Jpn. J. Appl. Phys.
, vol.22
, pp. 216
-
-
Miyamoto, H.1
Hirose, M.2
Osaka, Y.3
-
5
-
-
0035270908
-
Study on electrical characteristics of metal/boron nitride/metal and boron nitride/silicon structures
-
DOI 10.1016/S0925-9635(00)00509-4, PII S0925963500005094
-
C. Kimura, T. Yamamoto, and T. Sugino, Diam. Rel. Mater., 10, 1404 (2001). 10.1016/S0925-9635(00)00509-4 (Pubitemid 32477699)
-
(2001)
Diamond and Related Materials
, vol.10
, Issue.3-7
, pp. 1404-1407
-
-
Kimura, C.1
Yamamoto, T.2
Sugino, T.3
-
6
-
-
80053490418
-
-
10.1116/1.3633691
-
S. King, M. French, M. Jaehnig, M. Kuhn, B. Boyanov, and B. French, J. Vac. Sci. Technol. B., 29, 51207 (2011). 10.1116/1.3633691
-
(2011)
J. Vac. Sci. Technol. B.
, vol.29
, pp. 51207
-
-
King, S.1
French, M.2
Jaehnig, M.3
Kuhn, M.4
Boyanov, B.5
French, B.6
-
7
-
-
84255197503
-
-
June 6-9
-
Y. Chen, M. Spuller, M. Balseanu, Z. Cui, M. Naik, and L. Xia, 2010 International Interconnect Technology Conference (IITC), June 6-9, 2010, pp. 1-3.
-
(2010)
2010 International Interconnect Technology Conference (IITC)
, pp. 1-3
-
-
Chen, Y.1
Spuller, M.2
Balseanu, M.3
Cui, Z.4
Naik, M.5
Xia, L.6
-
8
-
-
77954314918
-
-
10.1007/s11671-010-9650-x
-
J. Liu, X. Liu, X. Xu, J. Wang, C. Li, H. Wei, S. Yang, Q. Zhu, Y. Fan, X. Zhang, and Z. Wang, Nanoscale Res. Lett., 5, 1340 (2010). 10.1007/s11671-010-9650-x
-
(2010)
Nanoscale Res. Lett.
, vol.5
, pp. 1340
-
-
Liu, J.1
Liu, X.2
Xu, X.3
Wang, J.4
Li, C.5
Wei, H.6
Yang, S.7
Zhu, Q.8
Fan, Y.9
Zhang, X.10
Wang, Z.11
-
9
-
-
36449009281
-
-
10.1063/1.352086
-
J. Waldrop, R. Grant, Y. Wang, and R. Davis, J. Appl. Phys., 72, 4757 (1992). 10.1063/1.352086
-
(1992)
J. Appl. Phys.
, vol.72
, pp. 4757
-
-
Waldrop, J.1
Grant, R.2
Wang, Y.3
Davis, R.4
-
10
-
-
0037042072
-
Characterization of high-k gate dielectric/silicon interfaces
-
DOI 10.1016/S0169-4332(01)00841-8, PII S0169433201008418
-
S. Miyazaki, Appl. Surf. Sci., 190, 66 (2002). 10.1016/S0169-4332(01) 00841-8 (Pubitemid 34524550)
-
(2002)
Applied Surface Science
, vol.190
, Issue.1-4
, pp. 66-74
-
-
Miyazaki, S.1
-
11
-
-
0028514659
-
-
10.1063/1.357491
-
T. Friedmann, P. Mirkarimi, D. Medlin, K. McCarty, E. Klaus, D. Boehme, H. Johnsen, M. Mills, and D. K. Ottesen, J. Appl. Phys., 76, 3088 (1994). 10.1063/1.357491
-
(1994)
J. Appl. Phys.
, vol.76
, pp. 3088
-
-
Friedmann, T.1
Mirkarimi, P.2
Medlin, D.3
McCarty, K.4
Klaus, E.5
Boehme, D.6
Johnsen, H.7
Mills, M.8
Ottesen, D.K.9
-
12
-
-
0000620178
-
-
10.1103/PhysRevB.30.6051
-
D. Hoffman, G. Doll, and P. Eklund, Phys. Rev. B, 30, 6051 (1984). 10.1103/PhysRevB.30.6051
-
(1984)
Phys. Rev. B
, vol.30
, pp. 6051
-
-
Hoffman, D.1
Doll, G.2
Eklund, P.3
-
13
-
-
0035440755
-
Effect of ammonia plasma pretreatment on silicon-nitride barriers for Cu metallization systems
-
DOI 10.1116/1.1406155
-
W. Qin, Z. Mo, L. Tang, B. Yu, S. Wang, and J. Xie, J. Vac. Sci. Technol. B, 19, 1942 (2001). 10.1116/1.1406155 (Pubitemid 33008449)
-
(2001)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.19
, Issue.5
, pp. 1942-1947
-
-
Qin, W.1
Mo, Z.Q.2
Tang, L.J.3
Yu, B.4
Wang, S.R.5
Xie, J.6
|