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Volumn 14, Issue 12, 2011, Pages

X-ray photoelectron spectroscopy investigation of the Schottky barrier at a-BN:HCu interfaces

Author keywords

[No Author keywords available]

Indexed keywords

CU DIFFUSION BARRIER; CU SUBSTRATE; CU-INTERCONNECTS; ELECTRICAL LEAKAGE; HIGH DENSITY; LOW DIELECTRIC CONSTANTS; SCHOTTKY BARRIERS; TWO-MATERIALS;

EID: 84255167787     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.015112esl     Document Type: Article
Times cited : (26)

References (13)
  • 5
    • 0035270908 scopus 로고    scopus 로고
    • Study on electrical characteristics of metal/boron nitride/metal and boron nitride/silicon structures
    • DOI 10.1016/S0925-9635(00)00509-4, PII S0925963500005094
    • C. Kimura, T. Yamamoto, and T. Sugino, Diam. Rel. Mater., 10, 1404 (2001). 10.1016/S0925-9635(00)00509-4 (Pubitemid 32477699)
    • (2001) Diamond and Related Materials , vol.10 , Issue.3-7 , pp. 1404-1407
    • Kimura, C.1    Yamamoto, T.2    Sugino, T.3
  • 10
    • 0037042072 scopus 로고    scopus 로고
    • Characterization of high-k gate dielectric/silicon interfaces
    • DOI 10.1016/S0169-4332(01)00841-8, PII S0169433201008418
    • S. Miyazaki, Appl. Surf. Sci., 190, 66 (2002). 10.1016/S0169-4332(01) 00841-8 (Pubitemid 34524550)
    • (2002) Applied Surface Science , vol.190 , Issue.1-4 , pp. 66-74
    • Miyazaki, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.