High-bias current-voltage-temperature characteristics of undoped rf magnetron sputter deposited boron carbide (B5C)/p-type crystalline silicon heterojunctions

Semiconductor Science and Technology

Volumn 18, Issue 1, 2003, Pages 7-22

  Abdul Gader Jafar, M M ^a  

^a UNIVERSITY OF JORDAN   (Jordan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CARBIDE; CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; MAGNETRON SPUTTERING; SEMICONDUCTOR DOPING; SILICON; SPUTTER DEPOSITION; THERMAL EFFECTS;

CRYSTALLINE SILICON HETEROJUNCTIONS;

HETEROJUNCTIONS;

EID: 0037236227     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/1/302     Document Type: Article

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