Fourier transform infrared spectroscopy investigation of chemical bonding in low-k a-SiC:H thin films

Journal of Non-Crystalline Solids

Volumn 357, Issue 15, 2011, Pages 2970-2983

  King, S W ^a   French, M ^a   Bielefeld, J ^a   Lanford, W A ^b  

^a INTEL CORPORATION   (United States)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

Chemical vapor deposition; FTIR; Low k; Plasma; Silicon carbide

Indexed keywords

A-SIC:H; A-SIC:H THIN FILMS; ANALYTICAL TECHNIQUES; CARBON RICH; CHEMICAL BONDINGS; CU DIFFUSION BARRIER; CU INTERCONNECT; CU-INTERCONNECTS; ELECTRON BEAM CURING; ETCH STOP; FOURIER TRANSFORM INFRARED; FTIR; HYDROGEN INCORPORATION; INTER-LAYER DIELECTRIC MATERIALS; LOW DIELECTRIC CONSTANTS; LOW-K; LOW-K MATERIALS; LOWER DENSITY; MASS DENSITIES; NANO-POROUS; NETWORK BONDING; ORGANOSILICATE MATERIALS; PHENYL GROUP;

BOND STRENGTH (CHEMICAL); CARBON FILMS; CHEMICAL ANALYSIS; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRON BEAMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THIN FILMS;

DIELECTRIC MATERIALS;

EID: 79958859512     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2011.04.001     Document Type: Article

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