Valence band offset at the amorphous hydrogenated boron nitride-silicon (100) interface

Applied Physics Letters

Volumn 101, Issue 4, 2012, Pages

  King, S W ^a   French, M ^a   Bielefeld, J ^a   Jaehnig, M ^a   Kuhn, M ^a   Xu, G ^a   French, B ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; HETEROSTRUCTURE DEVICES; SI (100) SUBSTRATE; VALENCE BAND OFFSETS;

HETEROJUNCTIONS; HYDROGENATION; INTERFACES (MATERIALS); PHOTOELECTRONS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS SILICON;

EID: 84864436657     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4739474     Document Type: Article

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