Kinetics of hydrogen in preparing amorphous B5C:H thin films

Journal of Materials Research

Volumn 26, Issue 7, 2011, Pages 867-873

  Bao, Ruqiang ^a   Chrisey, Douglas B ^a   Cherniak, Daniele J ^b  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b Rensselaer Polytechnic Institute   (United States)

Author keywords

Kinetics; Plasma enhanced CVD (PECVD) (deposition); Thin film

Indexed keywords

AMORPHOUS BORON; ANNEALING TEMPERATURES; C-H BOND; HYDROGEN ATOMS; HYDROGEN CONCENTRATION; HYDROGEN DISSOCIATION; HYDROGEN REMOVAL; NUCLEAR REACTION ANALYSIS; PLASMA-ENHANCED CVD (PECVD) (DEPOSITION); PRECURSOR FLUX; SINGLE-SOURCE PRECURSOR;

ACTIVATION ENERGY; ANNEALING; BORON; BORON CARBIDE; CHEMICAL VAPOR DEPOSITION; DEPOSITION; DISSOCIATION; EXPONENTIAL FUNCTIONS; HYDROGEN; KINETICS; NUCLEAR ENERGY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THIN FILMS;

HYDROGEN BONDS;

EID: 80054909195     PISSN: 08842914     EISSN: 20445326     Source Type: Journal    
DOI: 10.1557/jmr.2010.93     Document Type: Article

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