Hydrogen desorption kinetics and band bending for 6H-SiC(0 0 0 1) surfaces

Surface Science

Volumn 603, Issue 20, 2009, Pages 3104-3118

  King, S W ^a   Davis, R F ^a   Nemanich, R J ^b  

^a North Carolina State University   (United States)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Hydrogen; Kinetics; Silicon carbide; Temperature programmed desorption

Indexed keywords

ATOMIC HYDROGEN; AUGER ELECTRON; BANDBENDING; BI-LAYER; CORE LEVELS; DESORPTION KINETICS; DESORPTION PEAKS; DIAMOND SURFACES; EXCESS SI; HYDROGEN DESORPTION; HYDROGEN PLASMAS; IN-BAND; MOLECULAR HYDROGEN; SECOND ORDER KINETICS; SECOND ORDERS; SIC(0 0 0 1);

ACTIVATION ENERGY; ATOMIC SPECTROSCOPY; AUGER ELECTRON SPECTROSCOPY; BINDING ENERGY; ELECTRON DIFFRACTION; ELECTRONS; HOLOGRAPHIC INTERFEROMETRY; HYDROGEN; MONOLAYERS; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; RHENIUM; SILICON; SILICON CARBIDE; SINGLE CRYSTAL SURFACES; SULFUR COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

TEMPERATURE PROGRAMMED DESORPTION;

EID: 70349487902     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.08.023     Document Type: Article

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