The electronic and chemical structure of the a-B 3CO 0.5:H y-to-metal interface from photoemission spectroscopy: Implications for Schottky barrier heights

Journal of Physics Condensed Matter

Volumn 24, Issue 44, 2012, Pages

  Driver, M Sky ^a   Paquette, Michelle M ^a   Karki, S ^a   Nordell, B J ^a   Caruso, A N ^a  

^a UNIVERSITY OF MISSOURI KANSAS CITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CHEMICAL SPECIES; CONTACT MATERIAL; DIRECT CONVERSION; METAL OXIDE LAYERS; METAL OXIDES; OVERLAYERS; OXYGEN CONTENT; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY BARRIERS; SOLID-STATE NEUTRON DETECTORS; SPACE CHARGE REGIONS; THICK LAYERS; TIO; VALENCE BAND PHOTOEMISSION SPECTRA; WIDE-BAND-GAP SEMICONDUCTOR;

ALUMINUM; AMORPHOUS FILMS; BORON; BORON CARBIDE; COPPER; DEPOSITS; ENERGY GAP; HYDROGENATION; METALLIC COMPOUNDS; OHMIC CONTACTS; OXYGEN; PHOTOELECTRON SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR METAL BOUNDARIES; STOICHIOMETRY; STRUCTURE (COMPOSITION); TUNNEL JUNCTIONS;

CHROMIUM;

EID: 84867518772     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/44/445001     Document Type: Article

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