Dielectric constant of boron carbon nitride films synthesized by plasma-assisted chemical-vapor deposition

Applied Physics Letters

Volumn 80, Issue 4, 2002, Pages 649-651

  Sugino, Takashi ^a   Etou, Yoshihiro ^a   Tai, Tomoyoshi ^a   Mori, Hirotaro ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS REGIONS; BCN FILMS; BORON CARBON NITRIDE; CAPACITANCE-VOLTAGE CHARACTERISTICS; CRYSTAL GRAIN SIZE; POLYCRYSTALLINE; TRANSMISSION ELECTRON DIFFRACTION;

AMORPHOUS FILMS; AMORPHOUS MATERIALS; BORON; CARBON FILMS; CARBON NITRIDE; FILM GROWTH; GRAIN GROWTH; GROWTH TEMPERATURE; PLASMA DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA DIAGNOSTICS;

EID: 79956046695     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1436522     Document Type: Article

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