X-ray photoelectron spectroscopy investigation of the Schottky barrier at low-k a-SiO(C):H/Cu interfaces

Applied Physics Letters

Volumn 99, Issue 20, 2011, Pages

  King, S W ^a   French, M ^a   Jaehnig, M ^a   Kuhn, M ^a   French, B ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CU SUBSTRATE; ELECTRICAL LEAKAGE; SCHOTTKY BARRIERS;

CARBON FILMS; CHEMICAL VAPOR DEPOSITION; COPPER; DEPOSITION; INTERFACES (MATERIALS); PHOTONS; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCHOTTKY BARRIER DIODES; SILICON COMPOUNDS; THIN FILMS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 81855180698     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3660248     Document Type: Article

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