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Applied Physics Letters

Volumn 101, Issue 5, 2012, Pages

Band-edge transitions in hexagonal boron nitride epilayers

(6) Majety, S a Cao, X K a Li, J a Dahal, R a Lin, J Y a Jiang, H X a

a Department of Electrical and Computer Engineering (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND EDGE TRANSITION; BAND-EDGE EMISSIONS; BAND-EDGE PHOTOLUMINESCENCE; DECAY LIFE-TIME; HEXAGONAL BORON NITRIDE; HEXAGONAL BORON NITRIDE (H-BN); HIGH QUALITY; OPTICAL QUALITIES; P-TYPE DOPING; PL SPECTROSCOPY; SAPPHIRE SUBSTRATES; SURFACE EMISSIONS; TIME-RESOLVED PL MEASUREMENT;

ELECTRIC FIELDS; LASER RADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTOR DOPING;

EPILAYERS;

EID: 84864675987 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4742194 Document Type: Article

Times cited : (48)

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