Lifetime in proton irradiated silicon

Journal of Applied Physics

Volumn 79, Issue 8, 1996, Pages 3906-3914

  Hallén, Anders ^a   Keskitalo, Nicias ^a   Masszi, Ferenc ^a   Nágl, Viliam ^b  

^a UPPSALA UNIVERSITY   (Sweden)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001499388     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361816     Document Type: Article

References (40)

1. B. J. Baliga, Modern Power Devices (Wiley, New York, 1987), pp. 52-55.
2. J. Bartko and K. H. Sun, US Patent No. 4,056,4089, 1 November 1977.
3. D. C. Sawko and J. Bartko, IEEE Trans. Nucl. Sci. NS-30, 1756 (1983).
4. A. Mogro-Campero, R. P. Love, M. F. Chang, and R. F. Dyer, IEEE Trans. Electron Devices ED-33, 1667 (1986).
5. D. Silbert, W.-D. Nowak, W. Wondrak, B. Thomas, and H. Berg. Proceedings of the IEEE International Electron Device Meeting (IEEE, New York, 1985), p. 162.
6. A. Hallén and M. Bakowski, Solid-State Electron. 32, 1033 (1989).
7. A. Hallén, M. Bakowski, and M. Lundqvist, Solid-State Electron. 36, 133 (1992).
8. O. Engström and A. Alm, Solid-State Electron. 21, 1571 (1978).
9. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
10. N. Keskitalo and A. Hallen. Solid-State Electron. 37, 55 (1994).
11. M. Hüppi, J. Appl. Phys. 68, 2702 (1990).
12. P. Hazdra and J. Vobecky, Solid-State Electron. 37, 127 (1994).
13. N. Keskitalo, A. Hallen, F. Masszi, and J. Olsson, Solid-State Electron. (accepted, 1995).
14. L. W. Davies, Proc. IEEE 51, 1637 (1963).
15. A. Hallén, P. A. Ingemarsson, P. Håkansson, G. Possnert, and B. U. R. Sundqvist, Nucl. Instrum. Methods B 36, 345 (1989).
16. A. Hallén, Z. Paska, M. Rosling, B. U. R. Sundquist, B. G. Svensson, and J. Tirén, J. Appl. Phys. 67, 1266 (1990).
17. L. C. Kimerling, in Radiation Defects in Semiconductors 1976. Conf. Ser. No. 31, edited by N. B. Urli and J. W. Corbett (The Institute of Physics, Bristol, 1977), p. 221.
18. P. Hazdra, V. Haslar, and M. Bartos, Nucl. Instrum. Methods B 55, 637 (1991).
19. S. D. Brotherton and P. Bradley, J. Appl. Phys. 53, 5720 (1982).
20. A. O. Evwaraye and E. Sun, J. Appl. Phys. 47, 3776 (1976).
21. G. D. Watkins and J. W. Corbett, Phys. Rev. A 138, 543 (1965).
22. D. Pons, J. Appl. Phys. 55, 3644 (1984).
23. A. O. Evwaraye and B. J. Baliga, J. Electrochem. Soc. 124, 913 (1977).
24. M. A. Green, J. Appl. Phys. 67, 2944 (1990).
25. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods 174, 257 (1980).
26. B. G. Svensson, A. Hallén, B. Mohadjeri, J. H. Svensson, and J. W. Corbett, Phys. Rev. B 43, 2292 (1991).
27. C. H. Henry and D. V. Lang, Phys. Rev. B 35, 9149 (1987).
28. A. Hangleiter, Phys. Rev. B 37, 2594 (1988).
29. G. L. Miller, D. V. Lang, and L. C. Kimerling, Annu. Rev. Mater. Sci. 1977, 377.
30. T. Flohr and R. Heibig, IEEE Trans. Electron Devices 37, 2076 (1990).
31. G. Bohnert, R. Häcker, and A. Hangleiter. J. Phys. Paris 49-C4, 617 (1988).
32. M. Rosling, H. Bleichner, and E. Nordlander, Symposium Proceedings of the Materials and Devices for Power Electronics, MADEP-91, Florence, Italy, 1991, pp. 59-64.
33. J. Linnros, P. Norlin, and A. Hallén, IEEE Trans. Electron Devices 40, 2065 (1993).
34. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961).
35. L. J. Cheng, J. C. Corelli, J. W. Corbett, and G. D. Watkins, Phys. Rev. 152, 761 (1966).
36. K. Irmscher, H. Klose, and K. Maass, J. Phys. C 17, 6317 (1984).
37. B. G. Svensson, A. Hallén, and B. U. R. Sundqvist, J. Mater. Sci. Eng. B 4, 285 (1989).
38. P. M. Mooney, L. J. Cheng, M. Süli, J. D. Gerson, and J. W. Corbett, Phys. Rev. B 15, 3836 (1977).
39. Y. H. Lee, J. W. Corbett, and K. L. Brower. Phys. Status Solidi A 41, 637 (1977).
40. K. P. O'Donnell, K. M. Lee, and G. D. Watkins, Physica B 116, 258 (1983).