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Volumn 81, Issue 4, 1997, Pages 1645-1650

Origin of infrared bands in neutron-irradiated silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001620588     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364020     Document Type: Article
Times cited : (39)

References (22)
  • 6
    • 0344951697 scopus 로고
    • Y. Pomozov, L. Khirunenko, V. Shekhovtsov, and V. Yashnik, Fiz. Tekh. Poluprovodn. 24, 993 (1990) [Sov. Phys. Semicond. 24, 624 (1990)].
    • (1990) Sov. Phys. Semicond. , vol.24 , pp. 624
  • 8
    • 85033184217 scopus 로고    scopus 로고
    • ASTM Standard Test Method F121-83 for interstitial oxygen content of silicon by infrared spectroscopy
    • ASTM Standard Test Method F121-83 for interstitial oxygen content of silicon by infrared spectroscopy.
  • 9
    • 0004200991 scopus 로고
    • edited by S. Pantelides Gordon and Breach Science, New York
    • G. Watkins, in Deep Centers in Semiconductors, edited by S. Pantelides (Gordon and Breach Science, New York, 1986).
    • (1986) Deep Centers in Semiconductors
    • Watkins, G.1
  • 20
    • 85033160637 scopus 로고    scopus 로고
    • By selecting this value for the force constant, we get the experimentally observed LVM frequency
    • By selecting this value for the force constant, we get the experimentally observed LVM frequency.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.