Effect of germanium doping on the annealing characteristics of oxygen and carbon-related defects in Czochralski silicon

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Londos, C A ^a   Andrianakis, A ^a   Sgourou, E N ^a   Emtsev, V ^b   Ohyama, H ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING BEHAVIOR; ANNEALING PROCESS; ANNEALING TEMPERATURES; CARBON RICH; CZOCHRALSKI; CZOCHRALSKI SILICON; ELASTIC STRAIN; FORMATION TEMPERATURE; GE ATOM; GE CONCENTRATIONS; GERMANIUM DOPING; HYDROSTATIC COMPONENTS; IMPURITY ATOMS; IN-LINE; INTERSTITIALS; REACTION PATHS; RUNNING-IN; SELF-INTERSTITIAL;

ANNEALING; CRYSTAL IMPURITIES; DEFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; GERMANIUM; OXYGEN; SILICON;

OXYGEN VACANCIES;

EID: 79251490089     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3391127     Document Type: Article

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