Formation and evolution of oxygen-vacancy clusters in lead and tin doped silicon

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Londos, C A ^a   Aliprantis, D ^a   Sgourou, E N ^a   Chroneos, A ^b   Pochet, P ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c SP2M   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CO-DOPED; CO-DOPING; DOPED SILICON; EVOLUTION CURVE; ISOCHRONAL ANNEALS; LOCAL STRAINS; PB-DOPED SAMPLES; RADIATION INDUCED DEFECTS; SN-DOPED; VACANCY DIFFUSION;

DEFECTS; DOPING (ADDITIVES); INFRARED SPECTROSCOPY; LEAD; OXYGEN; SILICON; SOL-GELS;

TIN;

EID: 84863522246     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729573     Document Type: Article

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