Divacancy-oxygen and trivacancy-oxygen complexes in silicon: Local vibrational mode studies

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 129-134

  Murin, L I ^a   Svensson, B G ^b   Lindstrom J L ^c   Markevich, V P ^d   Londos, C A ^e  

^a INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^b UNIVERSITY OF OSLO   (Norway)

^c LUND UNIVERSITY   (Sweden)

^d UNIVERSITY OF MANCHESTER   (United Kingdom)

^e UNIVERSITY OF ATHENS   (Greece)

Author keywords

Silicon; Vacancy oxygen complexes; Vibrational modes

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; COMPLEXATION; DEFECTS; INFRARED SPECTROSCOPY; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; LIGHT ABSORPTION; SILICON; SILICON COMPOUNDS;

ABSORPTION BAND; CZOCHRALSKI; DIVACANCIES; FOURIER TRANSFORM INFRARED ABSORPTION SPECTROSCOPY; INTERSTITIAL OXYGEN; IRRADIATED SAMPLES; LOCAL VIBRATIONAL MODE; MEV-ELECTRONS; OXYGEN COMPLEXES; OXYGEN DEFECT; OXYGEN-RELATED DEFECTS; ROOM TEMPERATURE; TEMPERATURE RANGE; VACANCY-OXYGEN COMPLEXES; VIBRATIONAL MODES; NEUTRON IRRADIATED;

OXYGEN VACANCIES;

EID: 75949097305     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.129     Document Type: Conference Paper

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