Electron irradiation induced defects in germanium-doped Czochralski silicon substrates and diodes

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 674-677

  Chen, Jiahe ^a,b   Vanhellemont, Jan ^c   Simoen, Eddy ^d   Lauwaert, Johan ^c   Vrielinck, Henk ^c   Rafi, Joan Marc ^e   Ohyama, Hidenori ^f   Weber, Jörg ^a   Yang, Deren ^b  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b ZHEJIANG UNIVERSITY   (China)

^c GHENT UNIVERSITY   (Belgium)

^d IMEC   (Belgium)

^e INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^f KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

Czochralski silicon; DLTS; Germanium doping; Irradiation induced defect

Indexed keywords

BENEFICIAL EFFECTS; CZOCHRALSKI SILICON; DEEP LEVEL; DLTS; GE-DOPING; GERMANIUM DOPING; IRRADIATION HARDNESS; IRRADIATION INDUCED DEFECT; IRRADIATION-INDUCED DEFECTS; SI WAFER; TOTAL DENSITY;

CRYSTAL IMPURITIES; DEEP LEVEL TRANSIENT SPECTROSCOPY; DEFECTS; DOPING (ADDITIVES); ELECTRON IRRADIATION; GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 79952674649     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000142     Document Type: Article

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