Trivacancy and trivacancy-oxygen complexes in silicon: Experiments and ab initio modeling

Physical Review B - Condensed Matter and Materials Physics

Volumn 80, Issue 23, 2009, Pages

  Markevich, V P ^a   Peaker, A R ^a   Lastovskii, S B ^b   Murin, L I ^b   Coutinho, J ^c   Torres, V J B ^c   Briddon, P R ^d   Dobaczewski, L ^e   Monakhov, E V ^f   Svensson, B G ^f  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d NEWCASTLE UNIVERSITY   (United Kingdom)

^e INSTITUTE OF PHYSICS   (Poland)

^f UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77954709543     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.80.235207     Document Type: Article

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