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Volumn 82, Issue 1, 1997, Pages 126-136

Bulk damage effects in irradiated silicon detectors due to clustered divacancies

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001478514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365790     Document Type: Article
Times cited : (111)

References (60)
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  • 14
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    • note
    • We should emphasize that the divacancy clustering discussed in this article does not follow from previous defect cluster models of Gossick (Ref. 15) or Holmes (Ref. 16). Divacancies are argued to be produced in very high densities due to neutron irradiation (see Sec. III A) and the substrate material in which they are embedded is assumed to remain crystalline.
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    • MacEvoy, B.1
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.