IR studies of the impact of Ge doping on the successive conversion of VOn defects in Czochralski-Si containing carbon

Journal of Applied Physics

Volumn 109, Issue 3, 2011, Pages

  Londos, C A ^a   Andrianakis, A ^a   Sgourou, E N ^a   Emtsev, V V ^b   Ohyama, H ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CZOCHRALSKI; DIFFUSIVITIES; DOPED SAMPLE; ELASTIC STRAIN; FREE SI; GE CONCENTRATIONS; GE CONTENT; GE-DOPING; HIGH CARBON CONTENT; LOW CARBON; OXYGEN ATOM; OXYGEN DIFFUSIVITY; OXYGEN-RELATED DEFECTS; REACTION CHANNELS;

CONVERSION EFFICIENCY; DEFECTS; DOPING (ADDITIVES); OXYGEN; SILICON;

GERMANIUM;

EID: 79951819421     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3544040     Document Type: Article

References (62)

1. G. D. Watkins and J. W. Corbett, Phys. Rev. 0031-899X 121, 1001 (1961). 10.1103/PhysRev.121.1001
2. J. W. Corbett, G. D. Watkins, R. M. Chrenko, and R. S. Mc Donald, Phys. Rev. 0031-899X 121, 1015 (1961). 10.1103/PhysRev.121.1015
3. H. G. Grimeiss, Microscopic Identification of Electronic Defects in Semiconductors, MRS Symposia Proceedings No. 46 (Materials Research Society, Pittsburgh, 1985), p. 39.
4. J. Coutinho, R. Jones, P. R. Briddon, and S. Öberg, Phys. Rev. B 0556-2805 62, 10824 (2000). 10.1103/PhysRevB.62.10824 (Pubitemid 32372344)
5. M. Pesola, J. von Boehm, T. Mattila, and R. M. Nieminen, Phys. Rev. B 0556-2805 60, 11449 (1999). 10.1103/PhysRevB.60.11449
6. C. A. Londos, Phys. Status Solidi A 0031-8965 113, 503 (1989). 10.1002/pssa.2211130231
7. C. A. Londos, L. G. Fytros, and G. J. Georgiou, Defect Diffus. Forum 1012-0386 171-172, 1 (1999). 10.4028/www.scientific.net/DDF.171-172.1
8. J. W. Corbett, G. D. Watkins, and R. S. Mc Donald, Phys. Rev. 0031-899X 135, A1381 (1964). 10.1103/PhysRev.135.A1381
9. Y. H. Lee, J. C. Corelli, and J. W. Corbett, Phys. Lett. 0375-9601 60A, 55 (1977).
10. N. V. Sarlis, C. A. Londos, and L. G. Fytros, J. Appl. Phys. 0021-8979 81, 1645 (1997). 10.1063/1.364020
11. J. L. Lindström and B. G. Svensson, Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, MRS Symposia Proceedings No. 59 (Materials Research Society, Pittsburgh, 1986), p. 45.
12. H. J. Stein, Mater. Sci. Forum 0255-5476 10-12, 935 (1986). 10.4028/www.scientific.net/MSF.10-12.935
13. C. A. Londos and L. G. Fytros, J. Appl. Phys. 0021-8979 89, 928 (2001). 10.1063/1.1329316 (Pubitemid 33661838)
14. J. L. Lindström, L. I. Murin, B. G. Svensson, V. P. Markevich, and T. Hallberg, Physica B 0921-4526 340-342, 509 (2003). 10.1016/j.physb.2003.09. 146
15. C. A. Londos, N. V. Sarlis, L. G. Fytros, and K. Papastergiou, Phys. Rev. B 0556-2805 53, 6900 (1996). 10.1103/PhysRevB.53.6900
16. L. I. Murin, V. P. Markevich, I. F. Medredeva, and L. Dobaczewski, Semiconductors 1063-7826 40, 1282 (2006). 10.1134/S1063782606110066 (Pubitemid 44630655)
17. V. V. Voronkov and R. Falster, J. Electrochem. Soc. 0013-4651 149, G167 (2002). 10.1149/1.1435361 (Pubitemid 34325884)
18. V. J. B. Torres, J. Coutinho, R. Jones, M. Barosso, S. Öberg, and P. R. Briddon, Physica B 0921-4526 376-377, 109 (2006). 10.1016/j.physb.2005.12. 029
19. G. Kissinger, J. Dabrowski, V. Ahmetov, A. Sattler, D. Kot, and W. von Ammon, Solid State Phenom. 1012-0394 156-158, 211 (2010).
20. L. I. Murin, J. L. Lindström, V. P. Markevich, A. Misiuk, and C. A. Londos, J. Phys.: Condens. Matter 0953-8984 17, S2237 (2005). 10.1088/0953-8984/17/22/011 (Pubitemid 40877104)
21. L. I. Murin, J. L. Lindström, B. G. Svensson, V. P. Markevich, A. R. Peaker, and C. A. Londos, Solid State Phenom. 1012-0394 108-109, 267 (2005). 10.4028/www.scientific.net/SSP.108-109.267
22. C. A. Londos, G. D. Antonaras, M. S. Potsidi, A. Misiuk, and V. V. Emtsev, Solid State Phenom. 1012-0394 108-109, 205 (2005). 10.4028/www. scientific.net/SSP.108-109.205
23. T. Taishi, X. Xnang, I. Yonenaga, and K. Hoshikawa, Mater. Sci. Semicond. Process. 1369-8001 5, 409 (2002). 10.1016/S1369-8001(02)00128-2
24. A. Brelot and J. Charlemagne, Radiat. Eff. 0033-7579 9, 65 (1971). 10.1080/00337577108242034
25. C. A. Londos, A. Andrianakis, V. V. Emtsev, and H. Ohyama, J. Appl. Phys. 0021-8979 105, 123508 (2009). 10.1063/1.3148293
26. C. A. Londos, A. Andrianakis, V. V. Emtsev, and H. Ohyama, Semicond. Sci. Technol. 0268-1242 24, 075002 (2009). 10.1088/0268-1242/24/7/075002
27. D. Yang, J. Chen, X. Ma, and D. Que, J. Cryst. Growth 0022-0248 311, 837 (2009). 10.1016/j.jcrysgro.2008.09.194
28. G. Davies and R. C. Newman, in Handbook on Semiconductors, Materials Properties, and Preparations, edited by, T. S. Moss, and, S. Mahajan, (North Holland, Amsterdam, 1994), p. 1557.
29. C. A. Londos, Jpn. J. Appl. Phys., Part 1 0021-4922 27, 2089 (1988). 10.1143/JJAP.27.2089
30. C. A. Londos, Phys. Status Solidi A 0031-8965 102, 639 (1987). 10.1002/pssa.2211020223
31. C. A. Londos, Phys. Rev. B 0556-2805 35, 6295 (1987). 10.1103/PhysRevB.35.6295
32. C. A. Londos, M. S. Potsidi, G. D. Antonaras, and A. Andrianakis, Physica B 0921-4526 376-377, 165 (2006). 10.1016/j.physb.2005.12.044
33. C. A. Londos, Semicond. Sci. Technol. 0268-1242 5, 645 (1990). 10.1088/0268-1242/5/7/001
34. S. P. Chappell and R. C. Newman, Semicond. Sci. Technol. 0268-1242 2, 691 (1987). 10.1088/0268-1242/2/10/012
35. B. Murdin, Phys. Status Solidi B 0370-1972 235, 203 (2003). 10.1002/pssb.200390000
36. A. B. Vassilikou, J. G. Grammatikakis, and C. A. Londos, J. Phys. Chem. Solids 0022-3697 47, 727 (1986). 10.1016/0022-3697(86)90088-0 (Pubitemid 16639823)
37. N. Koumelis, G. E. Zardas, C. A. Londos, and D. K. Leventouri, Acta Crystallogr., Sect. A: Cryst. Phys., Diffr., Theor. Gen. Crystallogr. 0567-7394 32, 306 (1976). 10.1107/S0567739476000661
38. V. V. Emtsev, Jr., C. A. J. Ammerlaan, V. V. Emtsev, G. A. Oganesyan, B. A. Andreev, D. F. Kuritsyn, A. Misiuk, B. Surma, and C. A. Londos, Phys. Status Solidi B 0370-1972 235, 75 (2003). 10.1002/pssb.200301534 (Pubitemid 36208528)
39. A. Misiuk, J. Bak-Misiuk, A. Barcz, A. Romano-Rodriguez, I. V. Antonova, V. P. Popov, C. A. Londos, and J. Jun, Int. J. Hydrogen Energy 0360-3199 26, 483 (2001). 10.1016/S0360-3199(00)00094-X (Pubitemid 32431993)
40. D. Yang, Phys. Status Solidi A 0031-8965 202, 931 (2005). 10.1002/pssa.200460520 (Pubitemid 41365115)
41. D. Chen, H. Yang, X. Ma Li, and D. Que, J. Appl. Phys. 0021-8979 99, 073509 (2006). 10.1063/1.2188130
42. C. A. Londos, A. Andrianakis, V. V. Emtsev, G. A. Oganesyan, and H. Ohyama, Mater. Sci. Eng., B 0921-5107 154-155, 133 (2008). 10.1016/j.mseb.2008. 09.043
43. C. A. Londos, A. Andrianakis, D. Aliprantis, H. Ohyama, V. V. Emtsev, and G. A. Oganesyan, Physica B 0921-4526 401-402, 487 (2007). 10.1016/j.physb.2007. 09.005 (Pubitemid 350110526)
44. C. A. Londos, A. Andrianakis, V. V. Emtsev, G. A. Oganesyan, and H. Ohyama, Physica B 0921-4526 404, 4693 (2009). 10.1016/j.physb.2009.08.145
45. C. A. Londos, A. Andrianakis, E. N. Sgourou, V. V. Emtsev, and H. Ohyama, J. Appl. Phys. 0021-8979 107, 093520 (2010). 10.1063/1.3391127
46. A. Baghdadi, W. M. Bullis, M. C. Choarkin, Y. Li, R. I. Scace, R. W. Series, P. Stallhofer, and M. Watanabe, J. Electrochem. Soc. 0013-4651 136, 2015 (1989). 10.1149/1.2097135
47. J. L. Regolini, J. P. Stroquert, C. Ganter, and P. Siffert, J. Electrochem. Soc. 0013-4651 133, 2165 (1986). 10.1149/1.2108362
48. T. Halberg and J. L. Lindström, Mater. Sci. Eng., B 0921-5107 36, 13 (1996). 10.1016/0921-5107(95)01262-1
49. C. A. Londos, M. J. Binns, A. R. Brown, S. A. McQuaid, and R. C. Newman, Appl. Phys. Lett. 0003-6951 62, 1525 (1993). 10.1063/1.108628
50. A. K. Tipping, R. C. Newman, D. C. Neuton, and J. H. Tucker, Mater. Sci. Forum 0255-5476 10-12, 887 (1986). 10.4028/www.scientific.net/MSF.10-12.887
51. F. Shimura, T. Higuchi, and R. S. Hockett, Appl. Phys. Lett. 0003-6951 53, 69 (1988). 10.1063/1.100126
52. R. C. Newman and R. Jones, in Semiconductors and Semimetals, edited by, F. Shimura, (Academic, San Diego, 1994), 42, p. 289.
53. B. G. Svensson and J. L. Lindström, Phys. Rev. B 0556-2805 34, 8709 (1986). 10.1103/PhysRevB.34.8709
54. A. S. Oates and R. C. Newman, Appl. Phys. Lett. 0003-6951 49, 262 (1986). 10.1063/1.97190
55. C. A. Londos, Phys. Status Solidi A 0031-8965 163, 325 (1997). 10.1002/1521-396X(199710)163:2<325::AID-PSSA325>3.0.CO;2-1
56. G. Davies, E. C. Lightowlers, R. C. Newman, and A. S. Oates, Semicond. Sci. Technol. 0268-1242 2, 524 (1987). 10.1088/0268-1242/2/8/009
57. C. A. Londos, G. D. Antonaras, M. S. Potsidi, A. Misiuk, I. V. Antonova, and V. V. Emtsev, J. Phys.: Condens. Matter 0953-8984 17, S2341 (2005). 10.1088/0953-8984/17/22/023 (Pubitemid 40877113)
58. R. A. Casali, H. Rücker, and M. Methfessel, Appl. Phys. Lett. 0003-6951 78, 913 (2001). 10.1063/1.1347014 (Pubitemid 33662059)
59. R. C. Newman, J. Phys.: Condens. Matter 0953-8984 12, R335 (2000). 10.1088/0953-8984/12/25/201
60. L. Dobaczewski, O. Andersen, L. Rubaldo, K. Coscinski, V. P. Markevich, A. R. Peaker, and K. B. Nielsen, Phys. Rev. B 0556-2805 67, 195204 (2003). 10.1103/PhysRevB.67.195204
61. M. Furuhashi and K. Taniguchi, Appl. Phys. Lett. 0003-6951 86, 142107 (2005). 10.1063/1.1897433 (Pubitemid 40552466)
62. J. L. Lindström, G. S. Oehrlein, and J. W. Corbett, Phys. Status Solidi A 0031-8965 95, 179 (1986). 10.1002/pssa.2210950122