Defect reactions associated with divacancy elimination in silicon

Journal of Physics Condensed Matter

Volumn 15, Issue 39, 2003, Pages

  Markevich, V P ^a   Peaker, A R ^a   Lastovskii, S B ^b   Murin, L I ^b   Lindstrom J L ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON EMISSION; ELECTRON IRRADIATION; ELECTRON TRAPS; ELECTRONIC PROPERTIES; TEMPERATURE; VANADIUM COMPOUNDS;

DIVACANCIES; FLOAT ZONE GROWN; ISOCHRONAL ANNEALING; LAPLACE DEEP LEVEL TRANSIENT SPECTROCOPY;

SILICON;

EID: 0142123456     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/15/39/002     Document Type: Article

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