Carbon, oxygen and intrinsic defect interactions in germanium-doped silicon

Semiconductor Science and Technology

Volumn 26, Issue 10, 2011, Pages

  Londos, C A ^a   Sgourou, E N ^a   Chroneos, A ^b   Emtsev, V V ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; CARBON IMPURITIES; DEFECT CLUSTER; DENSITY FUNCTIONAL THEORY CALCULATIONS; DFT CALCULATION; FAST ELECTRONS; GE-DOPING; INTRINSIC DEFECTS; NEAREST NEIGHBORS; OPTICAL SPECTRA; THEORETICAL RESULT;

CARBON CLUSTERS; DEFECT DENSITY; DEFECTS; DENSITY FUNCTIONAL THEORY; GERMANIUM; INFRARED SPECTROSCOPY; IODINE; OXYGEN; THERMODYNAMIC STABILITY;

OXYGEN VACANCIES;

EID: 80053368969     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/10/105024     Document Type: Article

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