SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Journal of the Electrochemical Society

Volumn 149, Issue 3, 2002, Pages

Intrinsic point defects and impurities in silicon crystal growth

(2) Voronkova, V V a Falsterb, R b

a MEMC Electronic Materials (Italy)

b NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTAL IMPURITIES; ELECTRON TRAPS; INTERFACES (MATERIALS); POINT DEFECTS; TEMPERATURE;

TEMPERATURE GRADIENTS; TRAP SELF INTERSTITIALS; VACANCY TRAPS;

SILICON;

EID: 0036503604 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.1435361 Document Type: Article

Times cited : (164)

References (46)

1
- 0000727267
- (1982) J. Cryst. Growth , vol.59 , pp. 625
- Voronkov, V.V.¹

2
- 0032206825
- (1998) J. Cryst. Growth , vol.194 , pp. 76
- Voronkov, V.V.¹ Falster, R.²

3
- 0008811911
- B. O. Kolbeson, P. Stallhofer, C. Claeys, and F. Tardiff, Editors, PV 97-22; The Electrochemical Society Proceedings Series, Pennington, NJ
- (1997) Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing II , pp. 2
- Voronkov, V.V.¹ Falster, R.² Holzer, J.C.³

4
- 0026838912
- (1992) Semicond. Sci. Technol. , vol.7 , pp. 406
- Puzanov, N.I.¹ Eidenzon, A.M.²

5
- 0030264574
- (1996) J. Electrochem. Soc. , vol.143
- Nishimura, M.¹ Yoshino, S.² Motoura, H.³ Shimura, S.⁴ Mchedlidze, T.⁵ Hikone, T.⁶

6
- 0030286911
- (1996) Jpn. J. Appl. Phys., Part 1 , vol.35 , pp. 5597
- Kato, M.¹ Yoshida, T.² Ikeda, Y.³ Kitagawara, Y.⁴

7
- 0001266625
- (1997) Appl. Phys. Lett. , vol.70 , pp. 1248
- Ueki, T.¹ Itsumi, M.² Takeda, T.³

8
- 0016590007
- (1975) Appl. Phys. , vol.8 , pp. 319
- Foll, H.¹ Kolbesen, B.O.²

9
- 0003026118
- (1976) J. Cryst. Growth , vol.36 , pp. 4
- Petroff, P.M.¹ De Kock, A.J.R.²

10
- 0027662307
- (1993) Jpn. J. Appl. Phys., Part 1 , vol.32 , pp. 3675
- Sadamitsu, S.¹ Umeno, S.² Koike, Y.³ Hourai, M.⁴ Sumita, S.⁵ Shigematsu, T.⁶

11
- 0024770517
- (1989) Jpn. J. Appl. Phys., Part 2 , vol.28
- Hasebe, M.¹ Takeoka, Y.² Shinoyama, S.³ Naito, S.⁴

12
- 0026881311
- (1992) Jpn. J. Appl. Phys., Part 1 , vol.31 , pp. 1817
- Shimizu, H.¹ Munakata, C.² Honma, N.³ Aoki, S.⁴ Kosaka, Y.⁵

13
- 0030142927
- (1996) J. Electrochem. Soc. , vol.143 , pp. 1648
- Dornberger, E.¹ Von Ammon, W.²

14
- 0003832883
- (1973) Philips Res. Rep. Suppl. , vol.1 , pp. 1
- De Kock, A.J.R.¹

15
- 0002882294
- C. L. Claeys, P. Rai-Choudhury, M. Watanabe, P. Stalhofer, and H. J. Dawson, Editors; The Electrochemical Society Proceedings Series, Pennington, NJ
- (1998) High Purity Silicon V , vol.PV98-13 , pp. 28
- Saishoji, T.¹ Nakamura, K.² Nakajima, H.³ Yokoyama, T.⁴ Ishikawa, F.⁵ Tomioka, J.⁶

16
- 0002904961
- The Japan Society for the Promotion of Science; Nov 20-24
- (2000) Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials , pp. 59
- Nakamura, K.¹ Maeda, S.² Togawa, S.³ Saishoji, T.⁴ Tomioka, J.⁵

17
- 0001175490
- (1999) J. Appl. Phys. , vol.86 , pp. 5975
- Voronkov, V.V.¹ Falster, R.²

18
- 0001607116
- (2000) J. Appl. Phys. , vol.87 , pp. 4126
- Voronkov, V.V.¹ Falster, R.²

19
- 0031247354
- (1997) J. Cryst. Growth , vol.180 , pp. 343
- Dornberger, E.¹ Graf, D.² Suhren, M.³ Lambert, U.⁴ Wagner, P.⁵ Dupret, F.⁶ Von Ammon, W.⁷

20
- 0008808781
- T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, PV 99-1; The Electrochemical Society Proceedings Series, Pennington, NJ
- (1999) Defects in Silicon III , pp. 491
- Kikuchi, M.¹ Tanahashi, K.² Inoue, N.³

21
- 0035341560
- (2001) Microelectron. Eng. , vol.56 , pp. 165
- Voronkov, V.V.¹ Falster, R.²

22
- 0003767996
- T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, PV 99-1; The Electrochemical Society Proceedings Series, Pennington, NJ
- (1999) Defects in Silicon III , pp. 499
- Iida, M.¹ Kusaki, W.² Tamatsuka, M.³ Iino, E.⁴ Kimura, M.⁵ Muraoka, S.⁶

23
- 0022865321
- H. R. Huff, T. Abe, and B. Kolbeson, Editors, PV 86-4; The Electrochemical Society Proceedings Series, Pennington, NJ
- (1986) Semiconductor Silicon 1986 , pp. 61
- Chikawa, J.¹ Abe, T.² Harada, H.³

24
- 0033898951
- (2000) Mater. Sci. Eng., B , vol.73 , pp. 87
- Voronkov, V.V.¹ Falster, R.²

25
- 0032514072
- (1998) Phys. Rev. Lett. , vol.81 , pp. 393
- Bracht, H.¹ Haller, E.E.² Clark-Phelps, R.³

26
- 0001051163
- (1997) Phys. Rev. B , vol.55 , pp. 14279
- Tang, M.¹ Colombo, L.² Zhu, J.³ De La Rubia, T.D.⁴

27
- 0031700773
- (1998) J. Electrochem. Soc. , vol.145 , pp. 302
- Sinno, T.¹ Brown, R.A.² Von Ammon, W.³ Dornberger, E.⁴

28
- 0002412227
- T. Abe, W. M. Bullis, S. Kobayashi, W. Lin, and P. Wagner, Editors, PV 99-1; The Electrochemical Society Proceedings Series, Pennington, NJ
- (1999) Defects in Silicon III , pp. 38
- Watkins, G.D.¹

29
- 0032682602
- (1999) J. Cryst. Growth , vol.204 , pp. 462
- Voronkov, V.V.¹ Falster, R.²

30
- 0042538639
- (1996) Mater. Sci. Eng., B , vol.36 , pp. 91
- Rasmussen, F.B.¹ Oberg, S.² Jones, R.³ Ewels, C.⁴ Goss, J.⁵ Miro, J.⁶ Deak, P.⁷

31
- 0001675297
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3718
- Kageshima, H.¹ Taguchi, A.² Wada, K.³

32
- 0000254908
- (2000) Phys. Rev. B , vol.62 , pp. 1851
- Sawada, H.¹ Kawakami, K.²

33
- 0001292622
- the Japan Technical Information Service; Nov. 24-26
- (1999) Proceedings of the Kazusa Academia Park Forum on the Science and Technology of Silicon Materials , pp. 116
- Nakamura, K.¹ Saishoji, T.² Togawa, S.³ Tomioka, J.⁴ Tomioka, J.⁵

34
- 0035870960
- (2001) J. Appl. Phys. , vol.80 , pp. 4301
- Nakai, K.¹ Inoue, Y.² Yokota, H.³ Ikari, A.⁴ Takahashi, J.⁵ Tachikawa, A.⁶ Kitahara, K.⁷ Ohta, Y.⁸ Ohashi, W.⁹

35
- 0008810654
- B. O. Colbesen, C. Claeys, P. Stallhofer, and F. Tardiff, Editors, PV 2001-29; The Electrochemical Society Proceedings Series, Pennington, NJ
- (2001) Crystalline Defects and Contamination: Their Impact and Control in Device Manufacturing III (DECON 2001) , pp. 19
- Hourai, M.¹ Ono, T.² Umeno, S.³ Tanaka, T.⁴ Asayama, E.⁵ Nishikawa, H.⁶ Sano, M.⁷ Tsuya, H.⁸

36
- 0002626355
- (1992) Mater. Res. Soc. Symp. Proc. , vol.262 , pp. 3
- Abe, T.¹ Takeno, H.²

37
- 0042037772
- (1996) Mater. Sci. Eng., B , vol.36 , pp. 33
- Von Ammon, W.¹ Drier, P.² Hensel, W.³ Lambert, U.⁴ Kostler, L.⁵

38
- 0008837703
- The Japan Society for the Promotion of Science; Nov 20-24
- (2000) Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials , pp. 289
- Voronkov, V.V.¹

39
- 0033902295
- (2000) Mater. Sci. Eng., B , vol.73 , pp. 69
- Voronkov, V.V.¹

40
- 0001527312
- (1997) J. Appl. Phys. , vol.82 , pp. 182
- Jacob, H.¹ Pichler, P.² Ryssel, H.³ Falster, R.⁴

41
- 0008810858
- C. L. Claeys, P. Rai-Choudhury, M. M. Watanabe, P. Stalhofer, and H. J. Dawson, Editors, PV 2000-17; The Electrochemical Society Proceedings Series, Pennington, N.J.
- (2000) High-Purity Silicon VI , pp. 156
- Quast, F.¹ Pichler, P.² Ryssel, H.³ Falster, R.⁴

42
- 0000157979
- (1986) Mater. Res. Soc. Symp. Proc. , vol.59 , pp. 537
- Abe, T.¹ Harada, H.² Ozawa, N.³ Adomi, K.⁴

43
- 0024054732
- (1988) Jpn. J. Appl. Phys., Part 2 , vol.27
- Murakami, K.¹ Kuribayashi, H.² Masuda, K.³

44
- 0008837866
- The Japan Society for the Promotion of Science; Nov 20-24
- (2000) Proceedings of the 3rd International Symposium on Advanced Science and Technology of Silicon Materials , pp. 304
- Gosele, U.¹ Laveant, P.² Schulz, R.³ Englet, N.⁴ Wagner, P.⁵

45
- 0001635820
- (1984) J. Cryst. Growth , vol.68 , pp. 596
- Roksnoer, P.J.¹

46
- 85013564085
- (1980) J. Cryst. Growth , vol.49 , pp. 718
- De Kock, A.J.R.¹ Van De Wijgert, W.M.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.