Vibrational absorption from vacancy-oxygen-related complexes (VO, V2O, VO2) in irradiated silicon

Physica B: Condensed Matter

Volumn 273-274, Issue , 1999, Pages 291-295

  Lindstrom J L ^a   Murin, L I ^b   Markevich, V P ^b   Hallberg, T ^c   Svensson, B G ^d  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^d ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON IRRADIATION; OXYGEN; THERMAL EFFECTS;

VACANCY OXYGEN RELATED COMPLEXES;

SEMICONDUCTING SILICON;

EID: 0033340319     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(99)00447-0     Document Type: Article

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