On the effect of lead on irradiation induced defects in silicon

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 373-378

  David, M L ^a   Simoen, E ^b   Claeys, C ^b,c   Neimash, V ^d   Kras'Ko M ^d   Kraitchinskii, A ^d   Voytovych, V ^d   Kabaldin, A ^d   Barbot, J F ^a  

^a UMR6630   (France)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

DLTS; Electron irradiation induced defects; Pb; Silicon

Indexed keywords

DEFECTS; ELECTRON IRRADIATION; LEAD; LEAD COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON; TIN COMPOUNDS;

CAPTURE CROSS SECTIONS; CONDUCTION BAND EDGE; CZOCHRALSKI SILICON; FLUENCES; GROUP-IV; IRRADIATION-INDUCED DEFECTS; MEV-ELECTRONS; PB DOPING;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 36148968085     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.373     Document Type: Conference Paper

References (19)

1. C. Claeys, E. Simoen, V.B. Neimash, A. Kraitchinskii, M. Kras’ko, O. Puzenko, A. Blondeel and P. Clauws: J. Electrochem. Soc. Vol. 148 (2001), p. G738
2. A. Nylandsted Larsen, J.J. Goubet, P. Mejholm, J. Sherman Christensen, M. Fanciulli, H.P. Gunnlaugsson, G. Weyer, J. Wulff Petersen, A. Resende, M. Kaukonen, R. Jones, S. Öberg, P.R. Briddon, B.G. Svensson, J.L. Lindström and S. Dannefaer: Phys. Rev. B Vol. 62 (2000), p. 4535
3. E. Simoen, C. Claeys, V. Privitera, S. Coffa, M. Kokkoris, E. Kossionides, G. Fanourakis, A. Nylandsted Larsen and P. Clauws: Nucl. Instrum. Methods in Phys. Res. B Vol. 186 (2002), p. 19
4. E.V. Lavrov, M. Fanciulli, M. Kaukonen, R. Jones and P.R. Briddon: Phys. Rev. B Vol. 64 (2001), p. 125212
5. K. Milants, J. Verheyden, T. Barancira, W. Deweerd, H. Pattyn, S. Bukshpan, D.L. Williamson, F. Vermeiren, G. Van Tendeloo, C. Vlekken, S. Libbrecht and C. Van Haesendonck: J. Appl. Phys. Vol. 81 (1997), p. 2148
6. M.L. David, E. Simoen, C. Claeys, V. Neimash, M. Kras’ko, A. Kraitchinskii, V. Voytovych, A. Kabaldin and J.F. Barbot, accepeted for publication in J. Phys.: Condensed Matter (2005)
7. M.L. David, E. Simoen, C. Claeys, V. Neimash, M. Kras’ko, A. Kraitchinskii, Voytocych, V. Tishchenko and J.F. Barbot, to in Proc. High Purity Silicon VIII, The Electrochem. Soc. Ser. PV 2004-05 (2004), p. 395
8. E. Simoen, J.M. Rafi, C. Claeys, V. Neimash, A. Kraitchinskii, M. Kras’ko, V. Tischenko, V. Voitovych, J. Versluys and P. Clauws: Jpn. J. Appl. Phys. Vol. 42 (2003), p. 7184
9. V. Neimash, M. Kras’ko, V. Voytovych, V. Tischenko, E. Simoen, J.M. Rafí, C. Claeys, J. Versluys, O. De Gryse and P. Clauws: Phys. Stat. Sol. Vol. 201/3 (2004), p. 509
10. J.F. Barbot, E. Ntsoenzok, C. Blanchard, J. Vernois, D.B. Isabelle: Nucl. Inst. Meth. Phys. Res. B Vol. 95 (1995), p. 213
11. K.L. Wang, Y.H. Lee and J.W. Corbett: Appl. Phys. Lett. Vol. 33 (1978), p. 547
12. J.G. Xu, F. Lu and H.H. Sun: Phys. Rev. B Vol. 38 (1988), p. 3395
13. O.O. Awadelkarim, H. Weman, B.G. Svensson and J.L. Lindström: J. Appl. Phys. Vol. 60 (1986), p. 1974
14. B.G. Svensson, K. H. Ryden, B.M.S. Lewerentz: J. Appl. Phys. Vol. 66 (1989), p. 1699
15. J. Frenkel: Phys. Rev. Vol. 54 (1938), p. 647
16. G. Vincent, A. Chantre and D. Bois: J. Appl. Phys. Vol.50 (1979), p. 5484
17. J.H. Evans-Freeman, P.Y.Y. Kan and N. Abdelgader: J. Appl. Phys. Vol. 92 (2002), p. 3755
18. P. Pellegrino, P. Lévêque, J. Lalita, A. Hallén, C. Jagadish and B.G. Svensson: Phys. Rev. B Vol. 64 (2001), p. 195211
19. S.D. Brotherton, J.P. Gowers, N.D. Young, J.B. Clegg and J.R. Ayres: J. Appl. Phys. Vol. 60 (1986), p. 3567