Radiation effects on the behavior of carbon and oxygen impurities and the role of Ge in Czochralski grown Si upon annealing

Journal of Applied Physics

Volumn 105, Issue 12, 2009, Pages

  Londos, C A ^a   Andrianakis, A ^a   Emtsev, V ^b   Ohyama, H ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGGREGATION PROCESS; ANNEALING BEHAVIOR; CARBON CONCENTRATIONS; CARBON IMPURITIES; CZOCHRALSKI; DISORDERED REGIONS; EVOLUTION OF OXYGEN; GE-DOPING; INTERSTITIALS; INTRINSIC DEFECTS; IRRADIATED MATERIALS; IRRADIATED SAMPLES; ISOCHRONAL ANNEALS; OXYGEN IMPURITY; PARTIAL RESTORATION; RUNNING-IN;

AGGLOMERATION; ANNEALING; DOPING (ADDITIVES); ELECTRON IRRADIATION; GERMANIUM; IMPURITIES; INFRARED SPECTROSCOPY; NEUTRON IRRADIATION; OXYGEN; RADIATION EFFECTS; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; SUPERSATURATION;

SILICON;

EID: 67650217908     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148293     Document Type: Conference Paper

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