Defects related to DRAM leakage current studied by electrically detected magnetic resonance

Physica B: Condensed Matter

Volumn 308-310, Issue , 2001, Pages 1169-1172

  Umeda, T ^a   Mochizuki, Y ^a   Okonogi, K ^b   Hamada, K ^b  

^a NEC CORPORATION   (Japan)

^b Elpida Memory Inc   (Japan)

Author keywords

Defect; DRAM; EDMR; Leakage current

Indexed keywords

CHEMICAL BONDS; DYNAMIC RANDOM ACCESS STORAGE; MAGNETIC RESONANCE MEASUREMENT; POINT DEFECTS; SEMICONDUCTOR JUNCTIONS; SENSITIVITY ANALYSIS; THERMODYNAMIC STABILITY;

ELECTRICALLY DETECTED MAGNETIC RESONANCE (EDMR);

LEAKAGE CURRENTS;

EID: 0035679625     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-4526(01)00928-0     Document Type: Article

References (13)