Impurity engineering for germanium-doped Czochralski silicon wafer used for ultra large scale integrated circuit

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue 3, 2009, Pages 625-632

  Chen, Jiahe ^a   Yang, Deren ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL FURNACE; CZ SILICON; CZOCHRALSKI SILICON; CZOCHRALSKI SILICON WAFERS; DEVICE FABRICATIONS; IMPURITY DOPING; INTERNAL GETTERING; POTENTIAL MECHANISM; THERMAL BUDGET; ULTRA LARGE SCALE INTEGRATED CIRCUITS; WAFER DIAMETER;

DOPING (ADDITIVES); GERMANIUM; IMPURITIES; MICROELECTRONICS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTING SILICON COMPOUNDS;

SILICON WAFERS;

EID: 75849137822     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880709     Document Type: Conference Paper

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