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Journal of Applied Physics

Volumn 112, Issue 7, 2012, Pages

Interaction of n-type dopants with oxygen in silicon and germanium

(3) Chroneos, A a Sgourou, E N b Londos, C A b

a OPEN UNIVERSITY (United Kingdom)

b UNIVERSITY OF ATHENS (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY CALCULATIONS; INTERSTITIAL CLUSTERS; INTERSTITIAL PAIRS; INTERSTITIALS; N-TYPE DOPANTS; OXYGEN IN SILICON;

ARSENIC; DENSITY FUNCTIONAL THEORY; GERMANIUM; OXYGEN; PHOSPHORUS;

OXYGEN VACANCIES;

EID: 84867509185 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4757406 Document Type: Article

Times cited : (9)

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