Three-dimensional mapping of quantum wells in a GaN/InGaN core-shell nanowire light-emitting diode array

Nano Letters

Volumn 13, Issue 9, 2013, Pages 4317-4325

  Riley, James R ^a   Padalkar, Sonal ^a   Li, Qiming ^b   Lu, Ping ^b   Koleske, Daniel D ^b   Wierer, Jonathan J ^b   Wang, George T ^b   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

atom probe tomography; GaN; LED; nanowire; quantum well; semiconductor

Indexed keywords

ATOM PROBE TOMOGRAPHY; CATHODOLUMINESCENCE SPECTROSCOPY; CORE-SHELL NANOWIRES; CROSS-SECTIONAL SCANNING; GAN; INGAN/GAN MULTI-QUANTUM WELL; INTERFACE MORPHOLOGIES; THREE DIMENSIONAL MAPPING;

INTERFACES (MATERIALS); NANOWIRES; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR QUANTUM WELLS; TRANSMISSION ELECTRON MICROSCOPY;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE; INDIUM; NANOWIRE;

ARTICLE; CHEMISTRY; LIGHT; NANOTECHNOLOGY; SEMICONDUCTOR;

GALLIUM; INDIUM; LIGHT; NANOTECHNOLOGY; NANOWIRES; SEMICONDUCTORS;

EID: 84884242693     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl4021045     Document Type: Article

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