Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

Semiconductor Science and Technology

Volumn 27, Issue 2, 2012, Pages

  Wernicke, Tim ^a   Schade, Lukas ^b,c   Netzel, Carsten ^d   Rass, Jens ^a   Hoffmann, Veit ^d   Ploch, Simon ^a   Knauer, Arne ^d   Weyers, Markus ^d   Schwarz, Ulrich ^b,c   Kneissl, Michael ^a,d  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^c UNIVERSITY OF FREIBURG   (Germany)

^d LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPIC STRAIN; EFFECTS OF STRAINS; ELECTROLUMINESCENCE EMISSION; EMISSION ENERGIES; EMISSION WAVELENGTH; EXPERIMENTAL DATA; GAN SUBSTRATE; INGAN QUANTUM WELLS; NON-POLAR; QUANTUM-CONFINED STARK EFFECT; RED SHIFT; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SEMIPOLAR;

CRYSTAL ORIENTATION; ELECTROLUMINESCENCE; GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84856091896     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/2/024014     Document Type: Article

References (32)

1. Kneissl M and Schwarz U T 2007 Phys. Status Sol. RRL 1 A44
2. Miller D A B, Chemla D S, Damen T C, Gossard A C, Wiegmann W, Wood T H and Burrus C A 1984 Phys. Rev. Lett. 53 2173
3. Seo Im J, Kollmer H, Off J, Sohmer A, Scholz F and Hangleiter A 1998 Phys. Rev. B 57 R9435
4. Takeuchi T, Amano H and Akasaki I 2000 Japan. J. Appl. Phys. 39 413
5. Jnen H et al 2011 Phys. Status Sol. B 248 600
6. Okamoto K, Kashiwagi J, Tanaka T and Kubota M 2009 Appl. Phys. Lett. 94 071105
7. Avramescu A, Lermer T, Mller J, Eichler C, Bruederl G, Sabathil M, Lutgen S and Strauss U 2010 Appl. Phys. Expr. 3 061003
8. Adachi M, Yoshizumi Y, Enya Y, Kyono T, Sumitomo T, Tokuyama S, Takagi S, Sumiyoshi K, Saga N, Ikegami T, Ueno M, Katayama K and Nakamura T 2010 Appl. Phys. Expr. 3 121001
9. Strittmatter A, Northrup J, Johnson N M, Spiberg P, El-Ghoroury H, Usikov A and Syrkin A 2011 Phys. Status Sol. B 248 561
10. Funate M, Kotani T, Kondou T, Kawakami Y, Narukawa Y and Mukai T 2006 Appl. Phys. Lett. 88 261920
11. Wunderer T et al Phys. Status Sol. B 248 549
12. Fujan K J 2010 Appl. Phys. Lett. 97 101904
13. Schade L, Schwarz U T, Wernicke T, Weyers M and Kneissl M 2011 Phys. Status Sol. B 248 638
14. Vurgaftman I, Meyer J R and Piprek J (ed) 2007 Nitride Semiconductor Devices: Principles and Simulation (New York: Wiley)
15. Ambacher O et al 2002 J. Phys.: Condens. Matter 14 3399131
16. Scheibenzuber W and Schwarz U T 2011 Phys. Status Sol. B 647 647
17. Schade L, Schwarz U T, Wernicke T, Rass J, Ploch S, Weyers M and Kneissl M 2011 Appl. Phys. Lett. 99 051103
18. Wernicke T, Ploch S, Hoffmann V, Knauer A, Weyers M and Kneissl M 2011 Phys. Status Solidi B 248 574
19. Netzel C, Hoffmann V, Wernicke T, Knauer A and Weyers M 2010 J. Appl. Phys. 107 033510
20. Romanov A E, Baker T J, Nakamura S and Speck J S 2006 J. Appl. Phys. 100 023522
21. Feneberg M, Lipski F, Sauer R, Thonke K, Wunderer T, Neubert B, Brckner P and Scholz F 2006 Appl. Phys. Lett. 89 242112
22. Rodriguez H, Lobo N, Einfeldt S, Knauer A, Weyers M and Kneissl M 2010 Phys. Status Solidi A 207 2585
23. Kuokstis E, Yang J W, Simin G, Asif Khan M, Gaska R and Shur M S 2002 Appl. Phys. Lett. 80 977
24. Masui H, Asamizu H, Melo T, Yamada H, Iso K, Cruz S C, Nakamura S and DenBaars S P 2009 J. Phys. D: Appl. Phys. 42 135106
25. Hoffmann V, Netzel C, Zeimer U, Knauer A, Einfeldt S, Bertram F, Christen J, Weyers M, Trnkle G and Kneissl M J 2011 Crys. Growth 312 3428
26. Narukawa Y, Kawakami Y, Funato M, Fujita S and Fujita S 1997 Appl. Phys. Lett. 70 981
27. Netzel C, Hatami C, Hoffmann C, Wernicke T, Knauer A, Kneissl M and Weyers M 2011 Phys. Status Sol. C 8 2151
28. Li T, Hahn E, Gerthsen D, Rosenauer A, Strittmatter A, Reimann L and Bimberg D 2005 Appl. Phys. Lett. 86 241911
29. Seguin R, Rodt S, Strittmatter A, Reimann L, Bartel T, Hoffmann A, Bimberg D, Hahn E and Gerthsen D 2004 Appl. Phys. Lett. 84 4023
30. Netzel C, Mauder C, Wernicke T, Reuters B, Kalisch H, Heuken M, Vescan A, Weyers M and Kneissl M 2011 Semicond. Sci. Tech. 26 105017
31. Durnev M V, Omelchenko A V, Yakovlev E V, Evstratov I Yu and Karpov S Yu 2011 Phys. Status Solidi A 208 2671
32. Northrup J E 2009 Appl. Phys. Lett. 95 133107