Optical and microstructural studies of InGaNGaN single-quantum-well structures

Journal of Applied Physics

Volumn 97, Issue 10, 2005, Pages

  Graham, D M ^a   Soltani Vala, A ^a,d   Dawson, P ^a   Godfrey, M J ^a   Smeeton, T M ^b   Barnard, J S ^b   Kappers, M J ^b   Humphreys, C J ^b   Thrush, E J ^c  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c Thomas Swan Scientific Equipment Limited   (United Kingdom)

^d UNIVERSITY OF TABRIZ   (Iran)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; ELECTRON FLUX; INDIUM FRACTIONS; PHONON COUPLING;

ELECTRON ENERGY LOSS SPECTROSCOPY; FABRY-PEROT INTERFEROMETERS; GALLIUM NITRIDE; MICROSTRUCTURE; OPTICAL PROPERTIES; PHONONS; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 20944442414     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1897070     Document Type: Article

References (40)

1. S. Chichibu, K. Wada, and S. Nakamura, Appl. Phys. Lett. 71, 2346 (1997).
2. K. L. Teo, Appl. Phys. Lett. 73, 1697 (1998).
3. J. Bai, T. Wang, and S. Sakai, J. Appl. Phys. 88, 4729 (2000).
4. J. A. Davidson, P. Dawson, T. Wang, T. Sugahara, J. W. Orton, and S. Sakai, Semicond. Sci. Technol. 15, 497 (2000).
5. I. L. Krestnikov, Phys. Rev. B 66, 155310 (2002).
6. H. Schömig, S. Halm, A. Forchel, G. Bacher, J. Off, and F. Scholz, Phys. Rev. Lett. 92, 106802 (2004).
7. I.-H. Ho and G. B. Stringfellow, Appl. Phys. Lett. 69, 2701 (1996).
8. L. K. Teles, J. Furthmüller, L. M. R. Scolfaro, J. R. Leite, and F. Bechstedt, Phys. Rev. B 62, 2475 (2000).
9. N. Duxbury, U. Bangert, P. Dawson, E. J. Thrush, W. Van der Stricht, K. Jacobs, and I. Moerman, Appl. Phys. Lett. 76, 1600 (2000).
10. Y. S. Lin, Appl. Phys. Lett. 77, 2988 (2000).
11. K. Watanabe, Appl. Phys. Lett. 82, 715 (2003).
12. M. Takeguchi, M. R. McCartney, and D. J. Smith, Appl. Phys. Lett. 84, 2103 (2004).
13. V. Potin, J. Cryst. Growth 262, 145 (2004).
14. S. Chichibu, T. Sota, K. Wada, and S. Nakamura, J. Vac. Sci. Technol. B 16, 2204 (1998).
15. N. Grandjean, B. Damilano, and J. Massies, J. Phys.: Condens. Matter 13, 6945 (2001).
16. S. Dahr, U. Jahn, O. Brandt, P. Waltereit, and K. H. Ploog, Phys. Status Solidi A 192, 85 (2002).
17. F. Scholz, A. Sohmer, J. Off, V. Syganow, A. Dörnen, J.-S. Im, A. Hangleiter, and H. Lakner, Mater. Sci. Eng., B 50, 238 (1997).
18. M. Bosi and R. Fornari, J. Cryst. Growth 265, 434 (2004).
19. D. Cherns, J. Barnard, and F. A. Ponce, Solid State Commun. 111, 281 (1999).
20. T. M. Smeeton, M. J. Kappers, J. S. Barnard, M. E. Vickers, and C. J. Humphreys, Appl. Phys. Lett. 83, 5419 (2003).
21. V. Fiorentini, F. Bernardini, F. Della Sala, A. Di Carlo, and P. Lugli, Phys. Rev. B 60, 8849 (1999).
22. A. Hangleiter, J.-S. Im, H. Kollmer, S. Heppel, J. Off, and F. Scholz, MRS Internet J. Nitride Semicond. Res. 3, 15 (1998).
23. S. Kalliakos, X. B. Zhang, T. Taliercio, P. Lefebvre, B. Gil, N. Grandjean, B. Damilano, and J. Massies, Appl. Phys. Lett. 80, 428 (2002).
24. S. Kalliakos, P. Lefebvre, X. B. Zhang, T. Taliercio, B. Gil, N. Grandjean, B. Damilano, and J. Massies, Phys. Status Solidi A 190, 149 (2002).
25. R. W. Martin, P. R. Edwards, R. Pecharroman-Gallego, C. Liu, C. J. Deatcher, I. M. Watson, and K. P. O'Donnell, J. Phys. D 35, 604 (2002).
26. K. Huang and A. Rhys, Proc. R. Soc. London, Ser. A 204, 406 (1950).
27. P. P. Paskov, P. O. Holtz, B. Monemar, S. Kamiyama, M. Iwaya, H. Amano, and I. Akasaki, Phys. Status Solidi B 234, 755 (2002).
28. R. Pecharromán-Gallego, P. R. Edwards, R. W. Martin, I. M. Watson, Mater. Sci. Eng., B 93, 94 (2002).
29. J. Wagner, A. Ramakrishnan, H. Obloh, and M. Maier, Appl. Phys. Lett. 74, 3863 (1999).
30. M. Smith, Appl. Phys. Lett. 70, 2882 (1997).
31. H. C. Yang, P. F. Kuo, T. Y. Lin, Y. F. Chen, K. H. Chen, L. C. Chen, and J.-I. Chyi, Appl. Phys. Lett. 76, 3712 (2000).
32. Q. Li, S. J. Xu, M. H. Xie, S. Y. Tong, X. H. Zhang, W. Liu, and S. J. Chua, Jpn. J. Appl. Phys., Part 2 41, L1093 (2002).
33. T. Kuroda and A. Tackeuchi, J. Appl. Phys. 92, 3071 (2002).
34. M. Suzuki and T. Uenoyama, Phys. Rev. B 52, 8132 (1995).
35. P. Ruterana, S. Kret, A. Vivet, G. Maciejewski, and P. Dluzewski, J. Appl. Phys. 91, 8979 (2002).
36. D. Gerthsen, E. Hahn, B. Neubauer, A. Rosenauer, O. Schön, M. Heuken, and A. Rizzi, Phys. Status Solidi A 177, 145 (2000).
37. L. Bellaiche, T. Mattila, L.-W. Wang, S.-H. Wei, and A. Zunger, Appl. Phys. Lett. 74, 1842 (1999).
38. L.-W. Wang, Phys. Rev. B 63, 245107 (2001).
39. J. W. Orton, Semicond. Sci. Technol. 2, 597 (1987).
40. P. Zhou, H. X. Jiang, R. Bannwart, S. A. Solin, and G. Bai, Phys. Rev. B 40, 11862 (1989).