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Volumn 97, Issue 18, 2010, Pages
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Strain influenced indium composition distribution in GaN/InGaN core-shell nanowires
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Author keywords
[No Author keywords available]
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Indexed keywords
COAXIAL NANOWIRES;
COMPOSITION DISTRIBUTIONS;
CORE-SHELL NANOWIRES;
DEFECT MORPHOLOGY;
FINITE ELEMENT ANALYSIS;
GAN NANOWIRES;
GAN/INGAN;
HETEROEPITAXIAL LAYERS;
HIGH-CRYSTALLINE QUALITY;
INDIUM CONCENTRATION;
LOW DEFECT DENSITIES;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
SCANNING TRANSMISSION ELECTRON MICROSCOPY;
SHELL LAYERS;
SPATIALLY RESOLVED;
STRAIN DISTRIBUTIONS;
CHEMICAL ELEMENTS;
DEFECT DENSITY;
DEFECTS;
FINITE ELEMENT METHOD;
GALLIUM NITRIDE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
NANOWIRES;
OPTICAL PROPERTIES;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
TRANSMISSION ELECTRON MICROSCOPY;
INDIUM;
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EID: 78649290640
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3513345 Document Type: Article |
Times cited : (84)
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References (13)
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