Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 3, 2012, Pages 559-564

  Lai, K Y ^a,b   Paskova, T ^a,c   Wheeler, V D ^a   Chung, T Y ^b   Grenko, J A ^a   Johnson, M A L ^a   Udwary, K ^c   Preble, E A ^c   Evans, K R ^c  

^a North Carolina State University   (United States)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c KYMA TECHNOLOGIES INC   (United States)

Author keywords

cathodoluminescence; MOCVD; quantum wells; RSM; TEM

Indexed keywords

BLUE SHIFT; C-PLANE SAPPHIRE; C-PLANE SAPPHIRE SUBSTRATES; CATHODOLUMINESCENCE SPECTRA; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; EMISSION WAVELENGTH; GAN SUBSTRATE; HIGH RESOLUTION X RAY DIFFRACTION; IDENTICAL CONDITIONS; INGAN/GAN QUANTUM WELL; LED STRUCTURE; M-PLANE; PROBE CURRENTS; QUANTUM WELL; RSM; SHORTER WAVELENGTH; SURFACE ORIENTATION; WELL WIDTH;

CATHODOLUMINESCENCE; GALLIUM NITRIDE; INDIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84863411121     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127345     Document Type: Article

References (36)

1. S. Bernardini, and, V. Fiorentini, Phys. Status Solidi B 216, 391 (1999).
2. S. Takeuchi, H. Amano, and, I. Akasaki, Jpn. J. Appl. Phys. 39, 413 (2000).
3. J. P. Zhang, V. Adivarahan, H. M. Wang, Q. Fareed, E. Kuokstis, A. Chitnis, M. Shatalov, J. W. Yang, G. Simin, M. A. Khan, M. Shur, and, R. Gaska, Jpn. J. Appl. Phys. 40, L921 (2001).
4. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and, C. A. Burrus, Phys. Rev. Lett. 53, 2173 (1984).
5. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeuchi, H. Amano, and, I. Akasaki, Jpn. J. Appl. Phys. 36, L382 (1997).
6. H. Yamada, K. Iso, M. Saito, H. Hirasawa, N. Fellows, H. Masui, K. Fujito, J. S. Speck, S. P. DenBaars, and, S. Nakamura, Phys. Status Solidi RRL 2, 89 (2008).
7. X. Li, X. Ni, J. Lee, M. Wu, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, and, K. R. Evans, Appl. Phys. Lett. 95, 121107 (2009).
8. K.-C. Kim, M. C. Schmidt, H. Sato, F. Wu, N. Fellows, M. Saito, K. Fujito, J. S. Speck, S. Nakamura, and, S. P. DenBaars, Phys. Status Solidi RRL 1, 125 (2007).
9. K. Iso, H. Yamada, H. Hirasawa, N. Fellows, M. Saito, K. Fujito, S. P. DenBaars, J. S. Speck, and, S. Nakamura, Jpn. J. Appl. Phys. 46, L960 (2007).
10. C. Wetzel, M. Zhu, J. Senawiratne, T. Detchprohm, P. D. Persans, L. Liu, E. A. Preble, and, D. Hanser, J. Cryst. Growth 310, 3987 (2008).
11. D. Hanser, L. Liu, E. A. Preble, K. Udwary, T. Paskova, and, K. R. Evans, J. Cryst. Growth 310, 3953 (2008).
12. H. Yamada, K. Iso, H. Masui, M. Saito, K. Fujito, S. P. DenBaars, and, S. Nakamura, J. Cryst. Growth 310, 4968 (2008).
13. K. Y. Lai, T. Paskova, V. D. Wheeler, J. A. Grenko, M. A. L. Johnson, K. Udwary, E. A. Preble, and, K. R. Evans, J. Cryst. Growth 312, 902 (2010).
14. K. Y. Lai, M. A. L. Johnson, T. Paskova, A. D. Hanser, K. Udwary, E. A. Preble, and, K. R. Evans, Phys. Status Solidi C 6, S325 (2009).
15. S. F. Chichibu, T. Sota, K. Wada, and, S. Nakamura, J. Vac. Sci. Technol. B 16, 2204 (1998).
16. I. V. Rozhansky, and, D. A. Zakheim, Phys. Status Solidi A 204, 227 (2007).
17. Y. C. Shen, G. O. Mueller, S. Watanabe, N. F. Gardner, A. Munkholm, and, M. R. Krames, Appl. Phys. Lett. 91, 141101 (2007).
18. M. Tsuda, H. Furukawa, A. Honshio, M. Iwaya, S. Kamiyama, H. Amano, and, I. Akasaki, Jpn. J. Appl. Phys. 45, 2509 (2006).
19. J. E. Ayers, Heteroepitaxy of Semiconductors (Taylor & Francis, Inc., New York, 2007).
20. T. Detchprohm, M. Zhu, Y. Li, Y. Xia, C. Wetzel, E. A. Preble, L. Liu, T. Paskova, and, D. Hanser, Appl. Phys. Lett. 92, 241109 (2008).
21. M. E. Vickers, M. J. Kappers, T. M. Smeeton, E. J. Trush, J. S. Barnard, and, C. J. Humphreys, J. Appl. Phys. 94, 1565 (2003).
22. C. Mion, Investigation of the Thermal Properties of Gallium Nitride Using the Three Omega Technique, Ph.D. Dissertation, (North Carolina State University, Raleigh, 2005).
23. C. Mion, J. F. Muth, E. A. Preble, and, D. Hanser, Mater. Res. Soc. Symp. Proc. 892, FF29-05 (2005).
24. B. Beaumont, M. Vaille, T. Boufaden, B. el Jani, and, P. Gibart, J. Cryst. Growth 170, 316 (1997).
25. S. Keller, B. P. Keller, D. Kapolnek, U. K. Mishra, S. P. DenBars, I. K. Shmagin, R. M. Kolbas, and, S. Krishnankutty, J. Cryst. Growth 170, 349 (1997).
26. J. Crank, Mathematics of Diffusion (Clarendon, Oxford, 1957).
27. M. D. McCluskey, L. T. Romano, B. S. Krusor, and, N. M. Johnson, Appl. Phys. Lett. 73, 1281 (1998).
28. C.-C. Chuo, C.-M. Lee, and, J.-I. Chyi, Appl. Phys. Lett. 78, 314 (2001).
29. H. Sakuta, Y. Kawano, Y. Yamanaka, S. Kurai, and, T. Taguchi, Phys. Status Solidi C 2, 2407 (2005).
30. K. Y. Lai, T. Paskova, V. D. Wheeler, J. A. Grenko, M. A. L. Johnson, D. W. Barlage, K. Udwary, E. A. Preble, and, K. R. Evans, J. Appl. Phys. 106, 113104 (2009).
31. J. R. Creighton, D. D. Koleske, and, C. C. Mitchell, J. Cryst. Growth 287, 572 (2006).
32. Y. Liu, Basic Issues for High Quality GaN-Growth by MBE, MS Thesis (Chalmers University of Technology, Göteborg, Sweden, 2005).
33. Data adopted from International Molybdenum Association:.
34. Data adopted from Omega Engineering, Inc.: Transaction Vol. 1, 2nd ed. (1998): Non-contact temperature measurement ().
35. G. B. Stephenson, J. A. Eastman, C. Thompson, O. Auciello, L. J. Thompson, A. Munkholm, P. Fini, S. P. Den-Baars, and, J. S. Speck, Appl. Phys. Lett. 74, 3326 (1999).
36. H. P. D. Schenk, P. de Mierry, M. Laugt, F. Omnes, M. Leroux, B. Beaumont, and, P. Gibart, Appl. Phys. Lett. 75, 2587 (1999).